EPOSBP project deals with black phosphorus (BP) which has joined the 2D materials family only very recently in 2014. The first representative of this new class of materials is Graphene, isolated ten years ago, which discovery sparkled an intense research activity. However, the lack of band gap in graphene has launched a quest for new 2D materials. The field has gradually been enriched by new contenders such as hexagonal Boron Nitride (hBN) and more recently the transition metal dichalcogenides family (e.g MoS2), leading to the emergence of a broad family of 2D van der Waals materials. In the specific optoelectronic field, the progress has remained limited due to the impossibility to gather together a direct bandgap AND a high carrier mobility within the same material. In this direction, black phosphorus (BP) has attracted an explosive interest since 2014 as it displays major properties for (opto-)electronic devices: (1) high hole and electron mobilities in thin layers of exfoliated BP (~3000 cm2 V-1 s-1). (2) high (~105) ON/OFF current ratio in a transistor configuration with ambipolar characteristics. (3) the BP bandgap is predicted to remain direct from the bulk to the monolayer, making it highly interesting for optical applications. The electronic structure near the Fermi level strongly depends on the number of layers, leading to a bandgap increase from the mid infrared (0.35 eV) in the bulk to the visible range (2 eV) in monolayers. Thus BP offers a unique spectral range in the 2D landscape. However, while early 2017 results seems to highlight BPs peculiar properties in ultrathin layers, only little is known from experimental measurements. Additionally, thanks to its natural low spin-orbit coupling, the BP could be expected to very efficiently preserve the spin lifetime of the carriers, as in graphene, but offering a semiconducting gap. This would be a unique opportunity for spin transport and spintronics. The objective of EPOSBP is to investigate these unique properties of BP and, capitalizing on them, to achieve new optically active flat materials from visible to mid-infrared. The dielectric response as well as the electronic behaviors and spin injection of BP transistor will be investigated to achieve tunable and electrically driven light emission. The project is decomposed into three tasks: 1) learning basics on BP properties aiming at defining a robust spectroscopic tools package for facilitating the integration of BP in devices, 2) fabrication and characterization of devices, 3) fabrication of BP transistors and observation of electroluminescence and efficient spin transport and 4) the demonstration of spin driven light emission. EPOSBP project constitutes a broad partnership that includes the best specialists and skills on 2D Black Phosphorus and Spintronics allied with specialists of most advanced relevant spectroscopic characterization techniques, integration of 2D materials in devices and specialists capable to demonstrate the potential of BP for innovative electroluminescence and tunable spin transport devices. The strong commitment of industrial partner Thales, with key interests in the semi-conductor area, is a strong enabler toward potential TRL rise of the project.