Our method of growing pure InGaN μLEDs is completely unique. We start with a layer of thin GaN on a substrate. This layer has the same high defect density that other existing technologies struggle with. Then we add a mask made of either silicon nitride or aluminum oxide introduced by us using a high-resolution lithography process. The mask contains tiny holes ca. 100 nm in diameter which become growth sites for intrinsically defect-free InGaN pyramids. These pyramids are then reshaped into truncated hexagonal pyramids, aka InGaN platelets that are just 700 nm wide (effectively a nanoLED) and contain the active micro LED structure after regrowth on the top c-plane of the InGaN platelets. We can already grow the μLEDs on 2” wafers on a sapphire substrate, and we are developing new methods to grow 4” wafers on a silicon substrate. Our KPIs (pixel size 3.5%, FWHM <50 nm, etc.) already outcompete current commercial options for sub-2 µm-pixel size.