The modern definition of Ohm, the S.I. unit of electrical resistance, is based on the Quantum Hall Effect discovered by von Klitzing in 1981. Basically, a two-dimensional conductor shows a quantized transverse resistance when subjected to a large magnetic field perpendicular to the conducting plane,. The value of this transverse magneto-resistance (also called Hall resistance) is given by RK/N where N is an integer, RK= h/e2 is the von Klitzing’s constant, h is the Planck’s constant and e the electron charge. Today all practical resistance standards based on the quantum Hall effect (QHE) are made from semiconductor hetero-junctions in which a high purity layer of GaAs is limited by an AlGaAs barrier. When operated at low temperature (=1.5 K) in a high magnetic induction (˜10 T) they can achieve a relative uncertainty of 1 ppb in resistance calibration with: RK = 25,812 807 449 (86) O. Recently, writing in Nature Nanotechnology, Alexander Tzalenchuk et al. [1] reported that they had approached this level of accuracy in measurements of the QHE in epitaxial graphene : “the quantization accuracy […]: +/-3 parts in 109 inferred from our measurements is a 4 order of magnitude improvement on the previous best estimate achieved in an exfoliated graphene sample. The reported results readily put epitaxial graphene […] in the same league as their semiconductor counterparts.” This success is based on two facts. First, graphene has larger spacing between Landau Levels than the usual GaAs semiconductor. Second, the silicon carbide under epitaxial graphene is a much better substrate than the Silicon dioxide traditionally used for exfoliated graphene. Resistance standard appears then as the first application in which graphene could supplement a more usual semiconductor like GaAs. Along this line, Wilfrid Poirier and Félicien Schöpfer from this Consortium reviewed in a recent paper[2] all experimental results obtained on graphene. They concluded that epitaxial graphene could achieve, in the very near future, new standards for metrology. In this work we plan to further develop these results and produce state of the art devices by improving the graphene homogeneity, the lithography processes and optimizing the device geometry. The graphene thickness and homogeneity will be optimized by exploring different growth techniques. First, on the C-face of semi-insulating (S.I.) 4H-SiC samples, two subcontractors will deliver few layer graphene (FLG) samples. One subcontractor will be Linköping University (LiU) from Sweden, the second one will be the Centro Nacional de Microélectronica (CNM) in Barcelone, Spain. Both will use sublimation techniques, specifically optimized for this work. More advanced fabrication processes will be also investigated. Partners CEA-Saclay and Annealsys(AS), which is a small SME based in Montpellier, will deliver CVD samples on conducting substrates while, in the second part of project, L2C should have its own graphene sublimation set-up available. Before processing, all graphene samples will be comparatively analyzed using state of the art characterization tools like Raman, AFM, ARPES and STM. Then, the best FLG samples will be processed by Partners LPN, CEA and L2C and, again, the electrical properties will be comparatively evaluated. Finally, the best QHE devices will be transferred to LNE. Final quantization tests will use a Wheatstone bridge to reach an extremely high accuracy and, ultimately, these enhanced QHE devices will lead to the development of quantum resistance standards. [1] A. Tzalenchuk, S. Lara-Avila, A. Kalaboukhov, S. Paolillo, M. Syvajarvi, R. Yakimova, O. Kazakova, T.J.B.M. Janssen, V. Fal'ko, S. Kubatkin, Towards a quantum resistance standard based on epitaxial graphene, Nat Nanotechnol, 5 (2010) 186-189. [2] W. Poirier, F. Schopfer, METROLOGY Can graphene set new standards?, Nat Nanotechnol, 5 (2010) 171-172.