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The OXIGEN project aims to develop a new crystalline silicon (c-Si) photovoltaic (PV) cell generation, and to obtain = 23% efficiency on large area devices. The studies will focus on the fabrication of ultra-thin junctions and functionalized oxides to reach transparent and passivated contacts using industrial processes. Two technologies will be highlighted in this project, the first one being Plasma Immersion Ion Implantation (PIII) which is ideal to obtain ultra-thin junctions. The second one, based on fast Atomic Layer Deposition (ALD), is developed by the French company Encapsulix and will be used for the fabrication of innovative electrodes allowing both surface passivation and charge carrier collection. This collaboration in the field of functionalized oxides for c-Si PV cells will be great to share high level scientific knowledge and research tools. The project will be coordinated by CEA-LITEN (LHMJ) because most of the process integration will be done at INES facilities. The scientific expertise of four academic labs (INL, LMGP, IMEP LAHC, GEEPS-IPVF) on the thin films/interface/device fabrication, simulation and characterizations will be necessary for all technological improvements of OXYGEN cells structures. All technological and scientific improvements will be done in collaboration with a start-up (ENCAPSULIX), which will offer specific skills in industrial process development.
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