For a larger deployment of clean and sustainable energies more efficient and competitive converter solutions are necessary. In this framework, wide Bandgap (WBG) technology provides benefits compared to conventional silicon technology. Even those benefits are well known, e.g. efficiency and/or sufficient reduction on converter footprint, right now SiC are far too expensive and its cost has a negative impact on overall system cost. In the view of this situation, the objective of AdvanSiC is to produce, test and validate cost-effective HV SiC MOSFET semiconductors in various MVDC grid applications: a solid-state circuit breaker for DC converter stations, a full-scale wind converter and a full-scale solar inverter. The aim is to minimize HV SiC device cost by advanced design structures and process optimizations. And afterwards, assure an immune and reliable environment to handle SiC fast transients, as well as optimize passives and cooling system to provide cost reduction not only at device level but also at system level. The main goal of AdvanSiC is to provide industrial leadership in key and emerging technologies to SMEs, start-ups, and industry from Europe to Europe, specifically in a technology that will be key to provide clean and affordable energy.

R2POWER300 is committed to challenge the following Objectives: • Development and manufacturing of a multi-KET Pilot Line (i.e. Nanoelectronics, Nanotechnology, Advanced Manufacturing) • Energy Efficiency and CO2 Reduction megatrends. The project aims to achieve the following Goals: 1. Set the stage for the future extension to 300mm of the R2 Fab facility located in Agrate Brianza (Italy) - i.e. line’s specification, tools’ evaluation and screening, new process’s optimization and characterization, etc. 2. To evaluate, characterize and optimize the equipments and process necessary to achieve the new BCD10 technology, featuring 90nm lithography, at 300mm wafer size. BCD (i.e. Bipolar + CMOS + DMOS) is a unique smart power technology invented by ST in the mid ‘80s (CMOS’s gate length was 4 m at that time!). As of today BCD is one of the key technology assets of ST and the indefatigable evolution and challenging roadmap makes ST a world-class leader on smart power ICs. 3. Advanced System in Packages: some SiP activity will be performed, with specific reference to Sintering based die-attach, thermal analysis and dedicated packaging solution for high density ALD capacitors.

Silicon carbide presents a high breakdown field (2-4 MV/cm) and a high energy band gap (2.3–3.2 eV), largely higher than for silicon. Within this frame, the cubic polytype of SiC (3C-SiC) is the only one that can be grown on a host substrate with the huge opportunity to grow only the silicon carbide thickness required for the targeted application. The possible growth on silicon substrate has remained for long period a real advantage in terms of scalability regarding the reduced diameter of hexagonal SiC wafer commercially available. Even the relatively narrow band-gap of 3C-SiC (2.3eV), which is often regarded as detrimental in comparison with other polytypes, can in fact be an advantage. The lowering of the conduction band minimum brings about a reduced density of states at the SiO2/3C-SiC interface and MOSFET on 3C-SiC has demonstrated the highest channel mobility of above 300 cm2/(Vxs) ever achieved on SiC crystals, prompting a remarkable reduction in the power consumption of these power switching devices. The electrical activity of extended defects in 3C SiC is a major concern for electronic device functioning. To achieve viable commercial yields the mechanisms of defects must be understood and methods for their reduction developed.. In this project new approaches for the reduction of defects will be used, working on new compliance substrates that can help to reduce the stress and the defect density at the same time. This growth process will be driven by numerical simulations of the growth and simulations of the stress reduction. The structure of the final devices will be simulated using the appropriated numerical tools where new numerical model will be introduced to take into account the properties of the new material. Thanks to these simulations tools and the new material with low defect density, several devices that can work at high power and with low power consumption will be realized inside the project.