The main objective of SGAN-Next is to develop a fully European GaN on SiC foundry process and demonstrate outstanding performance at high frequency beyond Q-band, through the design of efficient and robust SSPA, LNA and switch devices for flexible LEO/GEO payloads. For this purpose, the project led by SENER as satellite equipment manufacturer, includes an epitaxy manufacturer (SweGaN), an industrial foundry (UMS), a research foundry (FBH) and two Universities (UNIBO and UAB). Moreover, the consortium count on the two main European satellite prime contractors (ADS and TAS) for the conceptual definition of services and the required system to answer market demand. SGaN-Next aims to secure a European supply chain with GaN epitaxial wafers provided by SweGaN. For this new process, Q/V band power cells will be designed making use of novel processing modules and epitaxial concepts which reduce parasitic losses and increase thermal drain to heat sink. In parallel, UMS provides access to its 0.1-µm GaN technology (GH10-10), which will be optimized and submitted to a space qualification assessment through two runs available for MMICs design and validation. Microwave characterisation of GaN technology performance by model refinement and device characterisation will be addressed to improve MMIC design process along the project. As highly efficient PAs are essential for Telecom active antennas with high number of active units, at least three PAs design concepts are proposed to answer the needs identified at equipment level. The efficiency has a critical impact on the extra power demanded to the system and the increased complexity to dissipate. On the reception side, a design of a LNA as well as a switch for robust RF front-end will be addressed. Last, but not least, packaging techniques will be evaluated for space use and finally, a demonstrator of an SSPA for actual antenna systems based on the designed MMIC’s will be developed and tested under space environmental conditions.

TA new generation of communications infrastructure is currently in development. The fifth generation (5G) communications technologies will provide internet access to a wide range of applications: from billions of low data rate sensors to high resolution video streaming. The 5G network is designed to scale across these different use cases and will use different radio access technologies for each use case. To support very high data rates 5G will use wide bandwidth spectrum allocation at mm-wave frequencies. The offered bandwidth at the mm-wave frequencies (above 24 GHz) is more than 10 times as large as that in the lower bands (sub 6 GHz). However, the move to mm-waves comes at a cost – increased path loss. This makes it extremely challenging to provide coverage at mm-wave frequencies. A partial remedy is to use beamforming to direct the radio energy to a specific user. For some deployment scenarios beamforming is not enough and the output power must also be increased. A major challenge is to bring affordable, high-performance mm-wave active antenna arrays into production. There is currently a market pull for this systems. The main objectives of the “5G_GaN2” proposal are substantial lowering the cost, power consumption and increase the output power of mm-wave active antenna systems. Advanced Gallium Nitride (GaN) technology will be used to get maximum output power and energy efficiency. High-volume and low-cost packaging and integration techniques developed for digital applications (CMOS) will be used. The capabilities of the developed technology will be shown in a set demonstrators. The application driven demonstrators will be used to guide the technology development towards maximum impact and exploitation in the post project phase. The consortium spans the complete value chain: from wafer suppliers, semiconductor fabrication and system integrators. In addition, key universities and research institutes guarantees academic excellence throughout the project.

The main objective of UltimateGaN is to safeguard Europe’s leading position in terms of power semiconductors and high performance RF applications by driving an innovative breakthrough change with the next generation of GaN-technologies. Several predecessor projects are the basis for the availability of the first generation of European based GaN-devices, also revealing that the challenges of these technologies have been heavily underestimated. This makes the high potential of GaN clearly evident to overcome the persisting threats of higher electric fields, current densities and power densities related to the necessity of device shrinkage. The new concept of following a vertical approach to address research through the entire supply chain of technology, packaging, reliability and application will enable a significant improvement of efficiency that goes beyond the limits of silicon based semiconductors in combination with packages that fully utilize the shrink-path of power GaN devices and which are not ready as of today. UltimateGaN’s unique approach addresses, among others, the following innovative applications with the scope to enable digitalisation and energy efficiency for 5G, Smart Grids and Smart Mobility that goes hand in hand with a significant reduction of the CO2 footprint: •Extremely efficient server power supply enabling lower energy consumption in data centres •Benchmark Photovoltaic inverters in terms of efficiency and size to foster the use of renewable energies •Affordable 5G-Amplifiers up to mm-wave enabling a faster 5G rollout •GaN powered LIDAR application to enable autonomous driving •Highest efficiency µ-Grid-converters and On-Board Chargers The global state-of-the-art first generation GaN devices are mainly based on US and Asian suppliers. Only a cooperative project like UltimateGaN with European market leaders and world-class researchers can take on the challenges and bring Europe at the forefront in terms of GaN enabled opportunities.

SweGaN is a commercial spin-off of Linköping University (Sweden), expert in the production of high quality high-frequency Gallium Nitride (GaN) semiconductor material wafers for bulk and custom device design markets, for use in space, telecoms, and defence and remote sensing sectors. SweGaN’s unique and patent-protected production tool and methodology produces materials that, implemented as High Electron Mobility Transistors (HEMTs), demonstrate some of the world’s best performances for Thermal Barrier Resistance and Electron Mobility. SweGaN materials can enable smaller devices, weighing less, consuming less power and reducing systems requirements; devices with better cost/benefit ratios. For space systems, where every W and kg has to be launched into orbit at a high cost, this has the potential to allow large savings, on the order of €1M reduction in launch and systems costs for a GEO communications satellite. SweGaN has invested 10,000 hours of research and development to reach the current state of development (TRL 6, first sample sales made). In the ELeGaNS project, SweGaN will develop its prototype production device and material to full commercially scaled production and availability. The phase 1 study will further develop technical feasibility (process and performance benchmarking, device design), commercial feasibility (market awareness, go-to-market strategy with a particular focus on scaling up production, and IPR), and financial feasibility (phase 2 budget and co-funding), summarised into a business plan. ELeGaNS will complement ongoing European efforts to secure an autonomous source of high quality GaN materials and devices for advanced applications within space, telecom and other areas. SweGaN aims to reach a market share of 10% of GaN devices in Europe, generating 5 direct and 65 indirect jobs and €7M in direct revenue by 2020.

ALL2GaN will be the backbone for the European Power Electronics Industry by offering an EU-born smart GaN Integration Toolbox. The project will provide the base for applications with significantly increased material- and energy efficiency, thus meeting the global energy needs while keeping the CO2 footprint to the minimum. 46 partners from 12 European countries will collaborate on 8 major objectives along the entire vertical value chain of power and RF electronics. O1: Push the limits of industrial GaN devices and system-on-chip approaches for ≤ 100V O2: Leverage the full potential of innovative substrates for GaN O3: Achieve novel benchmark solutions for lateral GaN devices and integrated circuits ≥ 650V O4: Reach best technical and cost performance of RF GaN on Si with novel integration concepts O5: Break the packaging limits by application driven integrated solutions of high performance GaN products O6: Advance the methods to evaluate and optimize reliability and robustness of GaN components, modules, and systems for shortest time-to-market and maximum product availability at the end user O7: Demonstrate highest affordable performance for greener power electronics and RF applications O8: Road-mapping for the future GaN technology development and applications to support long-term exploitation/business cases and European leadership beyond ALL2GaN. The collaboration in ALL2GaN is based on a work package structure covering activities on novel power- and RF-GaN technologies for various voltage classes, latest packaging technologies, research on reliability and demonstration in 11 Use Cases. With ambitious goals and a clear vision, ALL2GaN will unleash the energy saving and material efficiency potential of GaN semiconductors for a broad field of applications, thus being in line with the major challenges outlined in the ECS-SRIA. ALL2GaN technology will directly contribute to energy saving and cutting-edge green technology innovation as…Every Watt counts!