The objective of the 3DAM project is to develop a new generation of metrology and characterization tools and methodologies enabling the development of the next semiconductor technology nodes. As nano-electronics technology is moving beyond the boundaries of (strained) silicon in planar or finFETs, new 3D device architectures and new materials bring major metrology and characterization challenges which cannot be met by pushing the present techniques to their limits. 3DAM will be a path-finding project which supports and complements several existing and future ECSEL pilot-line projects and is linked to the MASP area 7.1 (subsection More Moore). Innovative demonstrators and methodologies will be built and evaluated within the themes of metrology and characterization of 3D device architectures and new materials, across the full IC manufacturing cycle from Front to Back-End-Of-Line. 3D structural metrology and defect analysis techniques will be developed and correlated to address challenges around 3D CD, strain and crystal defects at the nm scale. 3D compositional analysis and electrical properties will be investigated with special attention to interfaces, alloys and 2D materials. The project will develop new workflows combining different technologies for more reliable and faster results; fit for use in future semiconductor processes. The consortium includes major European semiconductor equipment companies in the area of metrology and characterization. The link to future needs of the industry, as well as critical evaluation of concepts and demonstrators, is ensured by the participation of IMEC and LETI. The project will directly increase the competitiveness of the strong Europe-based semiconductor Equipment industry. Closely connected European IC manufacturers will benefit by accelerated R&D and process ramp-up. The project will generate technologies essential for future semiconductor processes and for the applications enabled by the new technology nodes.

VIZTA project, coordinated by ST Micrelectronics, aims at developing innovative technologies in the field of optical sensors and laser sources for short to long-range 3D-imaging and to demonstrate their value in several key applications including automotive, security, smart buildings, mobile robotics for smart cities, and industry4.0. The key differentiating 12-inch Silicon sensing technologies developed during VIZTA are: • Innovative SPAD and lock-in pixel for Time of Flight architecture sensors • Unprecedent and cost-effective NIR and RGB-Z filters on-chip solutions • complex RGB+Z pixel architectures for multimodal 2D/3D imaging For short-range sensors : advanced VCSEL sources including wafer-level GaAs optics and associated high speed driver These developed differentiating technologies allows the development and validation of innovative 3D imaging sensors products with the following highly integrated prototypes demonstrators: • High resolution (>77 000 points) time-of-flight ranging sensor module with integrated VCSEL, drivers, filters and optics. • Very High resolution (VGA min) depth camera sensor with integrated filters and optics For Medium and Long range sensing, VIZTA also adresses new LiDAR systems with dedicated sources, optics and sensors Technology developments of sensors and emitters are carried out by leading semiconductor product suppliers (ST Microelectronics, Philips, III-V Lab) with the support of equipment suppliers (Amat, Semilab) and CEA Leti RTO. VIZTA project also include the developement of 6 demonstrators for key applications including automotive, security, smart buildings, mobile robotics for smart cities, and industry4.0 with a good mix of industrial and academic partners (Ibeo, Veoneer, Ficosa, Beamagine, IEE, DFKI, UPC, Idemia, CEA-List, ISD, BCB, IDE, Eurecat). VIZTA consortium brings together 23 partners from 9 countries in Europe: France, Germany, Spain, Greece, Luxembourg, Latvia, Sweden, Hungary, and United Kingdom.

The proposed pilot line project WAYTOGO FAST objective is to leverage Europe leadership in Fully Depleted Silicon on Insulator technology (FDSOI) so as to compete in leading edge technology at node 14nm and beyond preparing as well the following node transistor architecture. Europe is at the root of this breakthrough technology in More Moore law. The project aims at establishing a distributed pilot line between 2 companies: - Soitec for the fabrication of advanced engineered substrates (UTBB: Ultra Thin Body and BOx (buried oxide)) without and with strained silicon top film. - STMicroelectronics for the development and industrialization of state of the art FDSOI technology platform at 14nm and beyond with an industry competitive Power-Performance-Area-Cost (PPAC) trade-off. The project represents the first phase of a 2 phase program aiming at establishing a 10nm FDSOI technology for 2018-19. A strong added value network is created across this project to enhance a competitive European value chain on a European breakthrough and prepare next big wave of electronic devices. The consortium gathers a large group of partners: academics/institutes, equipment and substrate providers, semiconductor companies, a foundry, EDA providers, IP providers, fabless design houses, and a system manufacturer. E&M will contribute to the objective of installing a pilot line capable of manufacturing both advanced SOI substrates and FDSOI CMOS integrated circuits at 14nm and beyond. Design houses and electronics system manufacturer will provide demonstrator and enabling IP, to spread the FDSOI technology and establish it as a standard in term of leading edge energy efficient CMOS technology for a wide range of applications battery operated (consumer , healthcare, Internet of things) or not. Close collaboration between the design activities and the technology definition will tailor the PPAC trade-off of the next generation of technology to the applications needs.

R3-POWERUP will push through the new generation of 300mm Pilot Line Facility for Smart Power technology in Europe. This will enable the European industry to set the world reference of innovative and competitive solutions for critical societal challenges, like Energy saving and CO2 Reduction (ref. to COP21 Agreement ), as well as Sustainable Environment through electric mobility and industrial power efficiency. ● Development and demonstration of a brand new 300mm advanced manufacturing facility addressing a multi-KET Pilot Line (i.e. Nanoelectronics, Nanotechnology, Advanced Manufacturing) ● Improvement in productivity and competitiveness of integrated IC solutions for smart power and power discrete technologies. The strategy of the project is the following: ● The Pilot Line will enable the realization of sub-100nm Smart Power processes, starting from the 90nm BCD10 process, taking profit from the advanced and peculiar equipments available only for 300mm wafer size. ● The availability of a 300mm full processing line will also exploit the portability to 300mm of the most critical and expensive process steps devoted to power discrete devices. ● The Pilot Line will build on Digital Factory and Industry 4.0 principles, enforcing a flexible, adaptive and reliable facility, in order to investigate also the synergy and economic feasibility of supporting both Smart Power and power discrete processes in the same manufacturing line. ● The application of such technologies will be a breakthrough enabler for Energy Efficiency and CO2 Reduction worldwide, in line with COP21’s global action plan. The Pilot Line is based on three main pillars: 1. Market driven continuous innovation on smart-power and power discrete; 2. Industrial policy focused on high quality and mass production’s cost optimization; 3. Set the ground for future wafer upgrade of “More than Moore” disruptive technologies (e.g. advanced MEMS manufacturing, now at 200mm)

Silicon Carbide based power electronics use electrical energy significantly more efficient than current silicon-based semiconductors: gains from 6% to 30% are expected depending on application. TRANSFORM will provide European downstream market players with a reliable source of SiC components and systems based on an entirely European value chain - from substrates to energy converters. Its technical excellence strengthens the global competitive position of Europe. TRANSFORM improves current SiC technologies beyond state-of-the-art to serve large emerging markets for electric power conversion in renewable energies, mobility and industry. Substrate manufacturing process innovation will establish a new global standard: smart-cut technology allows high scalability, superior performance and reliability. Substrate and equipment manufacturers plus technology providers cooperate to increase maturity of the new processes from lab demonstration to pilot lines. Device manufacturers develop and tailor processes and device design based on the new substrate process, including adaptation of planarMOS and development of new TrenchMOS technology. Performance and reliability of devices is expected to increase greatly. For exploiting the potential of SiC devices, integration technologies and system design are improved concurrently, including new copper metallization processes for higher reliability and performance, module integration for high reliability and reduction of cost, and dedicated integrated driver technologies to optimize switching modes and parallel operation in high current applications. The project will demonstrate energy savings in applications (DC/AC, DC/DC, AC/DC) in the renewable energy domain, industry and automotive. TRANSFORM contributes to European societal goals and the green economy through significantly increasing energy efficiency by providing a competitive, ready-to-industrialized technology, strengthening Europes technological sovereignty in a critical field.