WInSiC4AP core objective is to contribute in developing reliable technology bricks for efficient and cost-effective applications addressing social challenges and market segments where Europe is a recognized global leader as well as automotive, avionics, railway and defence. WInSiC4AP approach is to rely on the strength of vertical integration allowing optimization, technologies fitting application requirements, developing the full ecosystem and approach relevant issues as reliability in the full scope. That enhances the competitiveness of EU- Industries as well as TIER1 and TIER2 down to the value chain in a market context where other countries today, such as the USA or Japan, are advancing and new players accessing SiC enter in the market. New topologies and architecture will be developed for targeted application simulating operational environment, at laboratory level, driving the needed and still missed technologies, components and demonstrators to fill the gap between current state of the art and the very high demanding specifications. WInSiC4AP framework has been built so that companies working in different domains (i.e. automotive car maker and TIER1-2 and avionics, railway and defence TIER1-TIER2) and in the vertical value chain (semiconductor suppliers, companies manufacturing inductors and capacitors) as well as academic entities and laboratories will collaborate to co-design solutions, solve problems and exchange know-how, such that unforeseen results may also emerge. WInSiC4AP will be supported with synergy between ECSEL JU and ESI funding enabling complementary activities with relevant economic and social impact envisage in a less development region of Union.

GaN4AP project has the ambitious target of making the GaN-based electronics to become the main power active device present in all power converter systems, with the possibility of developing a close-to-zero energy loss power electronic systems. GaN4AP project will… 1. Develop innovative Power Electronic Systems for power conversion and management with advanced architecture and circuit topology based on state of the art GaN-based High Electron Mobility Transistors (HEMTs) available in a new concept high-frequency packages that can achieve the requested 99% power conversion efficiency. 2. Develop an innovative material (Aluminium Scandium Nitride, AlScN) that combined with advanced growth and process solutions can provide outstanding physical properties for highly efficient power transistors. Therefore, a new HEMT device architecture will be fabricated with much higher current (2x) and power density (2x) than existing transistors. 3. Develop a new generation of vertical power GaN-based devices on MOSFET architecture with vertical p-GaN inversion channel for safe power switching up to 1200 V. We will cover all the production chain from the device design, processing and characterization up to tests in low inductance half bridge power modules and their implementation in high speed power switching systems. 4. Develop a new intelligent and integrated GaN solutions (STi2GaN) both in System in Package (SiP) and Monolithic variances, that will allow the generation of E-Mobility power converters. The projects will focus on scalable concept for 48V-12V bidirectional Buck Boost converters for conventional and ADAS applications combining, in a novel wire-bond free package, a state of the art BCD driver & controller along with a common substrate Monolithic 100V e-GaN Half Bridge. The development of new device technologies and innovative power circuits, employing the GaN-based devices is a crucial factor for the world-wide competitiveness of EU industries.