G4SEMI goal is to create added value through the introduction of high performing Graphene-on-wafer at competitive cost, accelerating innovation for the advanced semiconductor industry and eventually creating a new product category. This new area of development will make it possible for the European industry to harness this market high potential, fostering competitiveness and creating growth throughout the EU. GS proposes this Phase 2 project after the updated Phase 1 Business Innovation Plan, in order to take the CVD Graphene-on-wafer technology a step closer to the market through 3 specific applications: photosensors, biosensors and memory devices. This project will allow GS to become the worldwide leader as Graphene-on-wafer producer with the necessary production capacity to supply the semiconductor industry and the research laboratories. More specifically, the G4SEMI objectives are: • To develop ready-to-integrate Graphene-on-wafers for the semiconductor industry (memory devices, photosensors or biosensors). • To produce custom made Graphene-on-wafer for each of the 3 different applications. • Increase process yield and implement an automated and optimised quality control. • To supply 200mm wafers (industry standard) to the semiconductor market. • Scale production capacity to more than 10,000 wafers/year to demonstrate commercial viability • Reduce more than 10 times the Graphene-on-wafer cost per cm2 (by scaling up and improving quality control). GS has validated and patented a highly efficient Graphene-on-wafer production process and its application into electronic devices. GS will be able to introduce Graphene-on-wafer materials at industrial scale positively impacting the €545 billion semiconductor devices market. GS will become the worldwide leader in Graphene-on-wafer for semiconductor applications generating at least € 23.8 M in 2022, in incremental revenues, +76 jobs creation and a +10% market share by 2022.

Innovative graphene-based electronic devices have been studied, demonstrated and prototyped during the Graphene FET Flagship project Graphene Electronic Devices include GFETs (Graphene Field-Effect Transistors) that are multipurpose chips that can be used in advanced photonics (photosensors, x-ray sensors, optical communications) and sensors (chemical sensors, biosensors, hall sensors, pressure sensors) among other applications Currently, GFET devices are manually produced in a labour intensive, small scale (individual prototypes), small wafer size (<50mm) and very low production yield (high % of device failure) The research community and industry have a great interest in these devices The current Semiconductor manufacturers (Fabs) are focused in very large volume markets (+ 1 million units) so there is an opportunity for a Graphene Fab (GFAB) that produces GFETs according to customer’s specifications The objective of this project is to assess the feasibility of launching a new “Graphene Electronic Devices Fab” (GFAB) business that will offer Graphene Electronic Device fabrication to the industry and research centres Specially, the so called GFETs (Graphene Field Effect Transistors) have been developed during the FET Graphene Flagship project. GFETs are a special type of Graphene Electronic Device that offer higher performance for a wide range of applications The Graphene Electronic Devices must be produced under certified cleanroom manufacturing environment (ISO verified) using industry standard wafer sizes (150mm, 200mm and/or 300mm) offering a reliable, cost-competitive, fast and high yield product (ideally +95% yield). A complete supply chain must be defined by the incorporation of partners in the materials producers, IC (integrated circuits) design, semiconductor fabs, and equipment manufacturers sectors. This business will have an outstanding impact in the photonics and sensors industries and will accelerate the adoption of Graphene technology in other applica

G-IMAGER’s goal is to create added value through the introduction of high performing Graphene-on-wafer at competitive cost, accelerating innovation for the advanced electronic industry and eventually creating a new product category. This new area of development will make it possible for the European industry to harness this high market potential, fostering competitiveness and creating growth throughout the EU. The consortium proposes this project after an internal Business Innovation Plan, in order to take the CVD Graphene-on-wafer technology a step closer to the market through a new Graphene Imager product. This project will allow GS and EMB to become the worldwide leader as Graphene related electronics producers with the necessary production capacity to supply the industry and the research laboratories. More specifically, the G-IMAGER objectives are: • To develop ready-to-integrate Graphene-on-wafers for the advanced electronic industry. • To set up a customized rapid prototyping line and a new “foundry service”. • To produce a new Graphene Imager product and validate it for industrial acceptance. • Increase process yield and implement an automated and optimised quality control considering market requirements • Scale production capacity to more than 10,000 wafers/year to demonstrate commercial feasibility and business growth GS has validated and patented a highly efficient Graphene-on-wafer production process and its application into electronic devices. The consortium will be able to introduce Graphene Imager products at an industrial scale positively impacting the SWIR camera market of $ 1,100 M. The consortium will become the worldwide leader in Graphene-based advanced electronics and generate a cumulative net income of at least €60 M in four years and +33 jobs.

Goal of the ULTRAPHO FTI project is to change the market for photonic communication devices by bringing a groundbreaking technology to the market. The final goal is to establish a novel world leading enterprise in the semiconductor industry in the EU. Supported by major players like Nokia, Sony, and GLOBALFOUNDRIES, the consortium members will become worldwide leaders in the emerging field of photonic technologies and devices. The fundamentally new high-speed photonic devices use graphene to increase data transmission capacity of optical fibers. Together with novel fabrication and characterization tools and technology developed and marketed by the consortium the whole value chain from fabrication to the final product is covered. The consortium markets an ultrafast and broadband graphene photodetector which is of increasing importance for datacenters or 5G infrastructure. Moreover, the fabrication technology and tools for automated assembly and characterization will also be commercialized by the consortium. The ULTRAPHO objectives are: • To create a novel ultrafast photodetector that increases the data transmission capacity of optical fibers and validate it for industrial acceptance • Market a mass production process for graphene-on-wafer fabrication • Increase yield of the fabrication process and optimize quality control • Market tools for automated assembly and characterization on wafer level of high-speed photonic devices • Scale the production capacity to 10,000 wafers per year Consortium members patented world-leading technology and with the help of the ULTRAPHO project get the final boost to bring the novel technology to a market worth 41 B€ in 2022 (CAGR 37%).

Superconducting devices based on Josephson Junctions (JJs) are among the most versatile devices in superconducting electronics. Yet challenges remain because conventional JJs are created using a variety of materials that have been identified as a source of noise, dissipation and dephasing, and also, that raise compatibility problems during the fabrication process. FantastiCOF aims at developing a disruptive methodology to prepare exotic highly crystalline superconducting moiré materials, which will exceed the current challenges and limitations of existing materials and methods. Achieving this would represent an important step forward in the fabrication of low-noise JJ devices that will accelerate the development of the next generation of superconducting electronic devices with enhanced performance and sensitivity. FantastiCOF is an archetype of a perfectly balanced high risk/high gain project. It proposes visionary research to tackle the challenges in the synthesis of moiré materials and in the fabrication of low-noise JJs (ambitious and beyond the state-of-the-art), through the development of novel synthetic concepts (bottom-up) and the use of materials (2D covalent organic frameworks) with no precedents in the field, opening the door to a totally unexplored terrain (high risk), but providing tangible pathways towards achievements (solid risk assessment). The inherent high-risk is countered by a strongly interdisciplinary research team composed of 6 partners (5 academics + 1 SME) with different yet highly complementary backgrounds and demonstrated experience in their corresponding fields. Furthermore, FantastiCOF will have a high impact on a broad range of existing and emerging technologies that employ JJs (high gain), such as metrology, medicine, and quantum information technologies.