Due to their unique properties, research into the quantum physics and engineering of Sb-based compound semiconductor (III-Sb) materials and devices is flourishing worldwide. However, III-Sb penetration into the electronic and optoelectronic markets falls substantially short of their potential. The objective of QUANTIMONY (Innovative Training Network in Quantum Semiconductor Technologies exploiting Antimony) is to provide high-level training to fourteen early stage researchers (ESRs) in the overarching field of III-Sb semiconductor science and technology, covering all scientific and engineering aspects from modelling through to material growth and characterisation, device fabrication and analysis, and industrial exploitation. Via QUANTIMONY the beneficiaries and partners will prepare this cohort of researchers for, and jointly instigate, the transition of III-Sb materials from their current status of high-performance, high-cost niche application towards scalable and industrially relevant technologies. To fulfil this mission, we propose a 48-month project with seven work packages, four of which focus on III-Sb research activities that will accelerate the development of new technologies. QUANTIMONY is configured as a multi-site network comprising eleven internationally-renowned research teams as beneficiaries: seven universities, one research institute, two large corporations and one SME. It is enhanced by twelve partner organizations, six of which are industrial partners, three are large scale research facilities and three are internationally-leading academic groups. The combined consortium spans eleven countries: eight European, plus USA, Taiwan and Brazil.

The ELEQUANT project proposes a paradigm shift in quantum technology by exploiting flying qubits, presenting a transformative alternative to mainstream approaches such a superconducting or semiconducting qubits. While photon-based flying qubits face challenges in real-time manipulation and interaction due to their fast propagation speed and weak photon-photon interaction, ELEQUANT aims to harness the potential of electronic charges for superior scalability and connectivity. Through pioneering research in the manipulation of electronic wavepackets in semiconductor nanostructures, the project strives to achieve the ambitious goal of realizing high-fidelity flying charge qubits and demonstrating entanglement between them. Key objectives include the development of novel quantum materials platforms based on strained Ge and multi-layered graphene. By establishing a comprehensive roadmap for solid-state flying qubit technology, ELEQUANT seeks to accelerate innovation in quantum technology and foster collaborative partnerships with industry stakeholders on a European scale. With a focus on scalability, connectivity, and coherence, ELEQUANT aims to propel quantum technology into a new era of unprecedented capabilities and applications.

A key figure of merit of quantum technologies is the ratio between two characteristic times: the (decoherence) time during which a quantum state remains well defined and the time it takes for operating the device. Most technologies inherently work at the nano-second scale, hence concentrate on fighting decoherence processes. The goal of UltraFastNano is to pioneer new concepts at the crossroads between quantum optics and solid-state nanoelectronics at the pico-second scale, almost three orders of magnitude faster than other quantum technologies. Using fermionic flying excitations created with pico-second controlled voltage pulses at cryogenics temperatures (10 mK), we envision achieving full control of quantum excitations that propagate through electronic devices. A key deliverable of UltraFastNano is (i) the demonstration of the first electronic flying quantum bit, a paradigm-shifting approach to quantum computing and quantum communication. Besides, such a technology would enable major new applications such as (ii) electronic sources and detectors that operate at the picosecond scale; (iii) picosecond optoelectronic devices that convert between electronic and photon pulses; (iv) beyond state-of-the-art metrological measurement of the ampere. To achieve this vision, UltraFastNano will establish a unique unprecedented platform for creating, manipulating and detecting quasi-particles excitations at the single-electron level in semiconductor heterostructures. We will unlock two major technological bottlenecks: a picosecond on-demand coherent single particle source and the single-shot detection of propagating excitations at the discrete charge level. UltraFastNano gathers a team with complementary expertise in quantum nano-electronics, optics, nano-fabrication, microwave electronics, cryogenics, theoretical physics, applied mathematics and software engineering. The partners are internationally recognised for having played a key role in the emergence of the field.

By developing 100Gbaud Germanium-Silicon (GeSi) Quantum-Confined Stark-Effect (QCSE) modulators and highly sensitive 100Gbaud avalanche photodetectors (APD), SIPHO-G will bring breakthrough optical modulation and photodetection capability to the world of Silicon Photonics. The newly developed compact, waveguide-coupled modulator and detector building blocks will be monolithically integrated in a high-yield cutting-edge 300mm Silicon Photonics platform, propelling the bandwidth density, power efficiency, sensitivity and complexity of silicon photonic integrated circuits to the next level. Supported by an elaborate simulation and design enablement framework, SIPHO-G will demonstrate an extensive set of application-driven prototypes across the O-band and C-band. By bringing together the entire Silicon Photonics value chain, SIPHO-G will accelerate the development of next-generation co-packaged optics, long-haul optical communications, as well as emerging PIC applications such as optical neuromorphic computing, with performance levels of 4x-20x beyond current state of the art.

The THz part of the electromagnetic spectrum (0.3-10 THz) is currently exploited in commercial security screening systems (weapon detection beneath clothes), medical diagnostics tools (skin and breast cancer, burns, and in ophthalmology) and production-line monitoring (non-destructive test in the pharmaceutical industry). Existing sources of THz radiation are still too large and expensive to be a massively deployed in all of the existing and proposed applications, which include large bandwidth wireless communications and the extension of security screening to far-infrared spectroscopic identification of chemicals and explosives up to 10 THz. A lower production cost, a higher level of integration with control electronics, and a broader range of emitted wavelength are all desirable to expand the application of THz radiation. FLASH, will develop a room-temperature THz laser integrated on Si using CMOS technology-compatible processes and materials. The laser, of quantum cascade type, will be assembled using newly developed conduction-band germanium-rich heterostructures. It will leverage on the non-polar nature of silicon and germanium crystal lattices to potentially enabling room temperature operation, and will emit over 1 mW of power in the 1-10 THz range. In perspective, the development of the SiGe heterostructure platform will pave the way towards the new field of nonlinear silicon photonics based on band-structure engineering. The consortium includes EU leaders in silicon chip manufacturing, Si/SiGe/Ge epitaxial material growth, laser and band structure modelling, quantum cascade laser design and terahertz/infrared spectroscopy. The proposed device can provide a step-change in compactness, reduced cost, and functionality of source performance, thus enabling large scale use of terahertz radiation in existing fields of application, and open up new fields of application not yet commercially exploited, such as wireless communication and security imaging.