In line with industry needs, Moore’s law, scaling in ITRS 2013/2015, and ECSEL JU MASP 2016, the main objective of the TAKEMI5 project is to discover, develop and demonstrate lithographic, metrology, process and integration technologies enabling module integration for the 5 nm node. This is planned with available EUV/NA0.33 scanners that are optimized for mix and match with existing DUV/NA1.35 scanners, and with system design and development of a new hyper NA EUV lithography tool to enable more single exposure patterning at 5 nm to create complex integrated circuits. Process steps for modules in Front-end, Middle and Back-end of line are discovered and developed using the most advanced tool capabilities and they are evaluated morphologically and electrically using a relaxed test vehicle. During the development, specific challenges in metrology are assessed and metrology tools are upgraded or newly developed. The results are demonstrated in the imec pilot line with qualified metrology tools at the 5 nm node. The TAKEMI5 project relates to the ECSEL work program topic Process technologies – More Moore. It addresses and targets, as set out in the MASP, at a (disruptive) new Semiconductor Process, Equipment and Materials solutions for advanced CMOS processes that enable the module integration of electronic devices for the 5nm node in high-volume manufacturing and fast prototyping. The project touches the core of the continuation of Moore’s law which has celebrated its 50th anniversary. The cost aware development process supports the involved companies, and places them in an enhanced position for their worldwide competition. Through their worldwide affiliations, the impact of the TAKEMI5 project will be felt outside Europe in America and Asia Pacific semiconductor centers and is expected to benefit the European economy a lot by supporting its semiconductor equipment and metrology sectors with innovations, exports and employment.

In line with industry needs, Moore’s law, scaling in ITRS 2013, and ECSEL JU MASP 2017, the main objective of the TAPES3 project is to discover, develop and demonstrate lithographic, metrology, EUV mask technology, devices and process modules enabling 3nm node technology. This is planned with available EUV/NA 0.33 scanners, and with system design and integration of a new hyper NA EUV lithography tool to enable more single exposure patterning at 3nm to create complex integrated circuits. Process steps for 3D devices as alternative to the conventional FINFet will be explored for application in the 3nm node. The impact of the application of these so called 3D devices on circuit topology and logic design will be explored. During the development, specific challenges in metrology for the characterization of 3D devices will be assessed and metrology tools will be newly developed. The result will be demonstrated in the imec pilot line. The TAPES3 project relates to the ECSEL work program topic Equipment, Material and Manufacturing. It addresses and targets, as set out in MASP, the grand Challange of "More Moore Equipment and Materials for sub 10nm technologies" by exploring the requirements and solutions for the 3nm node. The project touches the core of the continuation of Moore’s law. Moreover, the cost aware development process will support the involved companies, and will place them in a preferred position over their worldwide competition. Through their worldwide affiliations, the impact of the TAPES3 project will be felt outside Europe in America and Asia Pacific semiconductor centers and is expected to benefit the European economy a lot by supporting its semiconductor equipment and metrology sectors with innovations, exports and employment.

In the ID2PPAC project the technology solutions for the 2nm node identified in the preceding project IT2 will be consolidated and integrated with the objective to demonstrate that Performance Power Area and Cost (PPAC) requirements for this generation of leading edge logic technology can be achieved. To continue the Moore’s law trajectory to the 2nm node, while meeting PPAC requirements, the combination of further advancements in EUV lithography & masks, 3D device structures, materials and metrology is required. The strength of the project pivots on the focused engagement of leading expert partners in these key interlocking areas and a shared pilot line. The ID2PPAC project, is expected to enable IC-fabs to do EUV-based, single-print, High Volume Manufacturing for the 2nm node by 2025. This technology evolution is driven by the growing demand for compute power which increases more than exponentially with time and has made the world migrate from 1 billion interconnected devices in the “PC era” to 10 billion in the “Mobile + cloud era” to the future “Intelligence era” in which there will be over 100 billion intelligent connected devices. To enable this growth, the semiconductor industry is continuously pursuing technology innovations to realize this progress as has been predicted by Moore’s Law and will continue to do so. The project will also help to expand Europe's technological capacity to act in this field, which is crucial for digitization, (edge) AI and for solving national, European and global societal challenges and will strengthen the consortium of leading European companies and institutes active in this sector.