Undeniably, there are numerous crystal materials that surpass Silicon based devices (such as Gallium Nitride, Silicon Carbide and Diamond), but the high cost of their manufacturing has always been the roadblock for their implementation in applications therefore nowadays Silicon dominates the semiconductor industry. Gallium nitride (GaN) is a more superior semiconductor to Silicon for RF and Power applications. The advantage of GaN is that it can be grown as a thin layer on top of a standard low-cost Silicon wafer (i.e. substrate) enabling a new power device family, Power High Electron Mobility Transistors (HEMTs) on Silicon. Power HEMTs are faster, compact in size, more efficient and comparable in price for converter applications to their aging Silicon counterparts. Similarly to Silicon power technology development (from discrete devices to smart power integrated circuits), the arrival of GaN-based integrated circuits, GaN power transistors monolithically integrated with Hall-effect and temperature sensors, GaN gate drivers and ASICs, will facilitate widespread use of gallium nitride technology for high-volume applications. The GaN Smart Power Integrated Circuit Technology (GaN SPICe) project brings together the Universities of Coventry and Glasgow to investigate, develop and provide functional verification of the game-changing GaN smart power integrated technology; the group will be the 1st in the World to integrate a normally-off power GaN HEMT with advanced galvanic Hall-effect and temperature sensors. HEMT is a voltage controlled device and on-chip monitoring of its output current is critical for safe and long operation of an electronic system, similar to monitoring one's heart rate. The galvanic sensor is a GaN Hall-effect device accompanied by signal conditioning circuitry (with Coventry's filed patent application number 1913936.9), to minimise drift in sensor characteristics at elevated temperatures. This will increase functionality, enable a reduction of system volume, reduce cost of assembly, and as chip temperature can be actively compensated, improve reliability and efficiency of the power device. These are fundamental requirements for complex power electronics systems, in particular when installed in limited volume, hostile (high temperature/vibration) environments, such as battery electric and hybrid vehicles for example. Coventry and Glasgow are uniquely positioned to make this project success, thanks to the track record and expertise of its academic and research staff, GaN power HEMT at Glasgow and GaN Hall-effect sensors at Coventry, and the investment in their laboratory facilities (clean room, design, and test and characterisation laboratories), making it one of very few research consortiums, in the UK and overseas, capable of providing innovation at every stage of this development.

The internet transmits data with a rate of hundreds of Terabits per second (Tbit/s), consumes 9% of the worldwide produced electrical energy and is growing at a rate of 20 - 30 % per year. One single carrier produced by a laser diode, can provide the data transmission of 26 Tbit/s. By combining optical carriers with TeraHertz (THz) waves as well, data rates of several Tbit/s can be transmitted over a wireless link, which will enable hybrid optical/THz wireless links. The next/sixth generation (6G) communication network is expected to be commercialised from 2030. 6G will generate greater diffusion and provide technical platforms to solve social, economic and humanity issues with higher data rates, wider bandwidth and lower latency. The urgency and challenges require the development of revolutionary technologies to meet the projected performance levels. These developments are captured in the recent beyond-5G roadmaps from research forums such as WWRF, NetWorld2020, H2020 5G-PPP, 6G-Summit, USA NSF, industry organizations including 3GPP, IEEE, ETSI, ITU-R, ITU-T, and spectrum regulatory forums e.g., FCC, ECC, OFCOM, WRC'19 [https://doi.org/10.3390/electronics9020351]. At the University of Glasgow (UofG), more than 10 research groups in James Watt School of Engineering are working on enabling technologies in the area of wireless communications, optical networking and a mix of fibre optics, millimetre wave and ultrafast THz wireless links. Such concepts require novel semiconductor devices and circuits that must be characterised at an early stage of development, i.e. at chip level, once they are manufactured at our James Watt Nanofabrication Centre (JWNC). To support this research, this project aims to establish an on-chip device and integrated circuit test cluster together with a carrier independent, ultra-high data transmission rate and processing system to measure key performance indicators in both the user and control planes. The proposed Test Cluster is the first of this kind in the world that allows complex signal and waveforms directly deployed to devices under test on chip. This will trigger new device concepts as well as enable development of transceiver architectures. This work will potentially create industry game changers. The Cluster consists of three key modules: waveform generation, signal analysis, and device characterisation. The three modules can operate individually or collectively and are built around a semi-automated probe station and an optical bench to allow on-chip probing, quasi-optics coupling and over-the-air characterisation setups. The waveform generation module can generate CW and wideband high-speed complex waveforms (>40 GHz) to meet the requirements of future communications for frequencies up to 1.1 THz. The signal analysis module can perform spectrum analysis of signal sources as well as real-time signal analysis on ultra-wideband, high data rate, complex signals in time domain for frequencies up to 1.1 THz. The device characterisation module permits continuous/pulsed current-voltage, network analysis and active load-pull measurements up to 1.1 THz. We are targeting measurements in hybrid transmission systems of several hundred Gigabits per second (Gbit/s). To allow other external groups and industry to use this unique measurement system for their research and development, a key aspect of the new measurement system is the possibility for remote control of all parameters via the Internet, which will enable use of the measurement system without the need to move the measurement system around and allow remote access to real-time data.

While aiming at increased wireless connectivity to enable revolutionary technologies such as autonomous driving or smart cities and industries, telecom networks of the future will have sustainability at their heart. Only with a network-as-a-whole coordination of resources, it will be possible to achieve an optimized trade-off between level of service and energy consumption. However, holistic orchestration of resources can only become a reality if each wireless front end in the infrastructure is flexible enough to tune its working conditions as needed, while operating efficiently. The most important bottleneck stopping this change is the high frequency power amplifier (PA) due to its high energy consumption and limitations imposed by the analogue design. MUST-RF will propose new solutions for the design, modelling and digital signal processing of PAs and wireless transmitters with improved energy efficiency and flexibility. Its main aim is to evolve the most advanced techniques in the field and introduce new ideas to provide significant advancements in all the aspects of PA design. In particular, the Cardiff University team will study multiple-input single-output (MISO) PAs advancing waveform engineering to a multi-port framework and, at modelling level, adding multi-port and memory formulations to the "Cardiff behavioural model". The Maynooth University (Ireland, Dublin) team will focus on the conditioning and control of the MISO PAs, leveraging on their experience in the linearisation of advanced PAs and introducing advanced algorithm and practical DSP solutions for the multi-input control with single observable output. The project, that will culminate in the design and testing of PAs and multi-antenna transmitters at C- and Ka- band, will offer to the scientific community new results, tools, and data which inspire new research and position the British Isles at the forefront of the field. The impact of the project will be accelerated by the involvement of several project partners from Academia and Industry, participating to the Steering Committee and supporting with significant in-kind contributions.

Co-created and delivered with industry, REWIRE will accelerate the UK's ambition for net zero by transforming the next generation of high voltage electronic devices using wide/ultra-wide bandgap (WBG/UWBG) compound semiconductors. Our application-driven, collaborative research programme and training will advance the next generation of semiconductor power device technologies to commercialisation and enhance the security of the UK's semiconductor supply-chain. Power devices are at the centre of all power electronic systems. WBG/UWBG compound semiconductor devices pave the way for more efficient and compact power electronic systems, reducing energy loss at the power systems level. The UK National Semiconductor Strategy recognises advances in these technologies and the technical skills required for their development and manufacture as essential to supporting the growing net zero economy. REWIRE's philosophy is centred on cycles of use cases co-created with industry and stakeholders, meeting market needs for devices with increased voltage ranges, maturity and reliability. We will develop multiple technologies in parallel from a range of initial TRL to commercialisation. Initial work will focus on three use cases co-developed with industry, for transformative next generation WBG/UWBG semiconductor power electronic devices: (1) Wind energy, HVDC networks (>10 kV) - increased range high voltage devices as the basis for enabling more efficient power conversion and more compact power converters; (2) High temperature applications, device and packaging - greatly expanded application ranges for power electronics; (3) Tools for design, yield and reliability - improving the efficiency of semiconductor device manufacture. These use cases will: improve higher TRL Silicon Carbide (SiC) 1-2kV technology towards higher voltages; advance low TRL devices such as Gallium Oxide (Ga2O3) and Aluminium Gallium Nitride (AlGaN), diamond and cubic Boron Nitride (c-BN) towards demonstration and ultimately commercialisation; and develop novel heterogenous integration techniques, either within a semiconductor chip or within a package, for enhanced functionality. Use cases will have an academic and industry lead, fostering academia-industry co-development across different work packages. These initial, transformative REWIRE technologies will have wide-ranging applications. They will enhance the efficient conversion of electricity to and from High Voltage Direct Current (HVDC) for long-distance transfer, enabling a sustainable national grid with benefits including more reliable and secure communication systems. New technologies will also bring competitive advantage to the UK's strategically important electric vehicle and battery sectors, through optimised efficiency in charging, performance, energy conversion and management. New use cases will be co-developed throughout REWIRE, with our >30 industrial and policy partners who span the full semiconductor device supply chain, to meet stakeholder priorities. Through engagement with suppliers, manufacturers, and policymakers, REWIRE will pioneer advances in semiconductor supply chain management, developing supply chain tools for stakeholders to improve understanding of the dynamics of international trade, potential supply disruptions, and pricing volatilities. These tools and our Supply Chain Resilience Guide will support the commercialisation of technologies from use cases, enabling users to make informed decisions to enhance resilience, sustainability, and inclusion. Equity, Diversity, and Inclusivity (EDI) are integral to REWIRE's ambitions. Through extensive collaboration across the academic and industrial partners, we will build the diverse, skilled workforce needed to accelerate innovation in academia and industry, creating resilient UK businesses and supply chains.

However, access to silicon prototyping facilities remains a challenge in the UK due to the high cost of both equipment and the cleanroom facilities that are required to house the equipment. Furthermore, there is often a disconnect in communication between industry and academia, resulting in some industrial challenges remaining unsolved, and support, training, and networking opportunities for academics to engage with commercialisation activities isn't widespread. The C-PIC host institutions comprising University of Southampton, University of Glasgow and the Science and Technologies Facilities Council (STFC), together with 105 partners at proposal stage, will overcome these challenges by uniting leading UK entrepreneurs and researchers, together with a network of support to streamline the route to commercialisation, translating a wide range of technologies from research labs into industry, underpinned by the C-PIC silicon photonics prototyping foundry. Applications will cover data centre communications; sensing for healthcare, the environment & defence; quantum technologies; artificial intelligence; LiDAR; and more. We will deliver our vision by fulfilling these objectives: Translate a wide range of silicon photonics technologies from research labs into industry, supporting the creation of new companies & jobs, and subsequently social & economic impact. Interconnect the UK silicon photonics ecosystem, acting as the front door to UK expertise, including by launching an online Knowledge Hub. Fund a broad range of Innovation projects supporting industrial-academic collaborations aimed at solving real world industry problems, with the overarching goal of demonstrating high potential solutions in a variety of application areas. Embed equality, diversity, and inclusion best practice into everything we do. Deliver the world's only open source, fully flexible silicon photonics prototyping foundry based on industry-like technology, facilitating straightforward scale-up to commercial viability. Support entrepreneurs in their journey to commercialisation by facilitating networks with venture capitalists, mentors, training, and recruitment. Represent the interests of the community at large with policy makers and the public, becoming an internationally renowned Centre able to secure overseas investment and international partners. Act as a convening body for the field in the UK, becoming a hub of skills, knowledge, and networking opportunities, with regular events aimed at ensuring possibilities for advancing the field and delivering impact are fully exploited. Increase the number of skilled staff working in impact generating roles in the field of silicon photonics via a range of training events and company growth, whilst routinely seeking additional funding to expand training offerings.