In the ID2PPAC project the technology solutions for the 2nm node identified in the preceding project IT2 will be consolidated and integrated with the objective to demonstrate that Performance Power Area and Cost (PPAC) requirements for this generation of leading edge logic technology can be achieved. To continue the Moore’s law trajectory to the 2nm node, while meeting PPAC requirements, the combination of further advancements in EUV lithography & masks, 3D device structures, materials and metrology is required. The strength of the project pivots on the focused engagement of leading expert partners in these key interlocking areas and a shared pilot line. The ID2PPAC project, is expected to enable IC-fabs to do EUV-based, single-print, High Volume Manufacturing for the 2nm node by 2025. This technology evolution is driven by the growing demand for compute power which increases more than exponentially with time and has made the world migrate from 1 billion interconnected devices in the “PC era” to 10 billion in the “Mobile + cloud era” to the future “Intelligence era” in which there will be over 100 billion intelligent connected devices. To enable this growth, the semiconductor industry is continuously pursuing technology innovations to realize this progress as has been predicted by Moore’s Law and will continue to do so. The project will also help to expand Europe's technological capacity to act in this field, which is crucial for digitization, (edge) AI and for solving national, European and global societal challenges and will strengthen the consortium of leading European companies and institutes active in this sector.

The objective of the 10ÅCe pThe objective of the 10ÅCe project is to explore and realize solutions for the 10Å CMOS chip technology. Its consortium covers the entire value chain for manufacturing of the CMOS chips in the 10A node, that is, from chip design to lithography to process technology and finally chip metrology. Essential parts of hardware, software and processing technology are developed pushing the boundaries of semiconductor design and manufacture to enable the new node and keep Moore’s law alive. The 10ÅCe project is built based on the following four pillars. Lithography Equipment: ASML and expert EUV partners Zeiss, FastMicro, IOM, Plasma Matters, TNO, TU/e, University of Twente and VDL-ETG will: • Increase key performance indicators of the EUV tool, to enable smaller pitches and increase yield. • Increase sustainability of the EUV tool, both during production as well as increasing the times a module in an EUV tool can be refurbished. Chip design and mask optimization: Imec with the involvement of expert imaging , CAD and IP design partners ARM, ASML and Siemens will: • Assess the impact of the introduction of 3D mCFET on chip design: in terms of power, performance and area. • Development of new computational lithography solutions to print 10Å CFET structures, to improve imaging by next generation mask design. Process Technology: As the ultimate device for logic, the CFET architecture is proposed and Imec and expert partners Coventor, EVG, IBS, Intel, JSR, LAM, RECIF, TEL, Zeiss and Wooptix will: • Demonstrate a fully functional monolithic CFET (mCFET) • Increase sustainability of the chip manufacturing process, across the manufacturing process and including resist material development. Process characterization: Applied Materials and expert partners Thermofisher, Nova, KLA and Bruker will: • Explore and realize high throughput and sample density per wafer, for the analysis, characterization for 10Å 3D CFET devices, interconnect and materials

The objective of the ACT10 project is to develop and demonstrate the required technology options, including their integration, for the 10Ångstrom node. The 32 participating partners cover a wide range of activities along the entire value chain for the manufacturing of CMOS chips. Activities include equipment development, computer aided design tooling and process technology development. Essential parts of hardware, software and processing technology are developed pushing the boundaries of semiconductor design and manufacture to enable the new node and keep Moore’s law alive. The project aims to enhance the attractiveness of the EU as a location for new cutting-edge high volume and legacy node fabs. The ACT10 project is built based on the following four pillars. 1. Lithography Equipment and Mask Technology: Increase key-performance indicators in the optical system of High-NA Lithography machines, along with developing advanced mask processes and equipment to reach optical imaging requirements, and nonlinear optics material lifetime effects. 2. Chip design and Block Level validation; Assessment of different CFET devices and evaluate building blocks for digital and analog IPs. 3. Process Technology: development of innovative solutions for routing of the stacked n- and p-devices of the CFET architecture, development of 0.55NA (high-NA) single patterning solutions, and the development of semi-damascene BEOL for the 10Å node. 4. Computational Metrology and Process Monitoring Equipment: develop computational metrology methods, and develop metrology and inspection modules and equipment.