photonixFAB brings together key European photonics and semiconductor players, to establish a strong and sovereign European supply chain for silicon photonics. The consortium leverages the volume capacity of X-FAB, the European More-than-Moore foundry, and addresses the work program with six key objectives: (1) Transferring IMEC's world-renowned silicon-on-insulator (SOI) platform to X-FAB, to achieve industrial manufacturing capacity. The SOI platform addresses a variety of high-speed and sensing applications. (2) Extending the industrial manufacturing capability of LIGENTEC's silicon nitride (SiN) technology at X-FAB, to become the industry standard for SiN photonics. The low-loss, and broad transparency of SiN are perfect for sensing, quantum computing, amongst others. (3) Increasing maturity of heterogeneous integration with SMART Photonics' Indium Phosphide (InP) active components such as lasers, modulators and detectors. These components are integrated on top of the SOI and SiN platforms by transfer-printing. This is an X-FAB associated technology, forming a key innovation differentiator for photonixFAB. The leading European RTOs, IMEC and CEA, are supporting photonixFAB with various technologies, developed in Horizon Europe activities, such as prototype transfer-printing, LiNbO3 modulators and Ge detectors on SiN. (4) Strengthening the European ecosystem with design automation (Luceda), innovative packaging solutions (PHIX), and increased testing capabilities. (5) Demonstrating the viability of the new supply chain and technologies through six application-oriented demonstrators in a wide array of markets. (6) Setting up pilot line and multi-project wafer access to serve innovation by start-ups, SMEs and large entities, and opening photonixFAB for direct feedback on competitiveness and capabilities. Thereby the relationships between the supply chain partners and prospective end-users, as well as between the photonics and the ECS worlds will be strengthened.

The main objective of the storAIge project is the development and industrialization of FDSOI 28nm and next generation embedded Phase Change Memory (ePCM) world-class semiconductor technologies, allowing the prototyping of high performance, Ultra low power and secured & safety System on Chip (SoC) solutions enabling competitive Artificial Intelligence (AI) for Edge applications. The main challenge addressed by the project is on one hand to handle the complexity of sub-28nm ‘more than moore’ technologies and to bring them up at a high maturity level and on the other hand to handle the design of complex SoCs for more intelligent, secure, flexible, low power consumption and cost effective. The project is targeting chipset and solutions with very efficient memories and high computing power targeting 10 Tops per Watt. The development of the most advanced automotive microcontrollers in FDSOI 28nm ePCM will be the support technology to demonstrate the high performances path as well as the robustness of the ePCM solution. The next generation of FDSOI ePCM will be main path for general purpose advanced microcontrollers usable for large volume Edge AI application in industrial and consumer markets with the best compromise on three requirements: performances, low power and adequate security. On top of the development and industrialization of silicon process lines and SoC design, storAIge will also address new design methodologies and tools to facilitate the exploitation of these advanced technology nodes, particularly for high performance microcontrollers having AI capabilities. Activities will be performed to setup robust and adequate Security and Safety level in the final applications, defining and implementing the good ‘mixture’ and tradeoff between HW and SW solutions to speed up adoption for large volume applications.

YESvGaN targets a new low-cost wide band gap (WBG) power transistor technology for enabling high-efficiency power electronic systems in the field of electromobility, industrial drives, renewable energies and data centers. In many applications requiring power transistors with high voltage and current rating (600…1200V, ~100A), silicon IGBT technology is nowadays used due to cost considerations accepting its lower efficiency compared to WBG solutions. The main objective of YESvGaN is to demonstrate innovative vertical gallium nitride (GaN) power transistors fabricated on a low-cost substrate such as silicon. This so-called vertical membrane architecture combines the superior performance of GaN as WBG power transistor material with the advantages of a vertical architecture regarding current and voltage robustness at a price competitive to silicon IGBTs. To this end, the entire value chain from substrate, epitaxy, process technology, interconnection technology to application in relevant power electronic systems is addressed. YESvGaN clusters the relevant competences along the value chain in a consortium of large companies, SMEs and institutes from seven European countries.

Europe is poised to play a pivotal role in the technological revolution, particularly in the field of edge AI, which promises sustainable growth, performance, and reliability. The NeAIxt project is a strategic initiative designed to foster European independence and control over edge AI technology, benefiting both companies and citizens. The project presents a golden opportunity for European SMEs to grow, network, and enhance skills, leveraging exposure to the global market. Research labs and RTOs will bridge the gap to the future by developing necessary technologies and competencies, while universities will cultivate and disseminate advanced skills required for this technological evolution. NeAIxt aims to solidify Europe's position in edge AI and eNVM technology by enhancing AI enablers, evolving eNVM for edge applications, and demonstrating AI capabilities at both chip and system levels. The project is committed to ensuring the safety and security of AI services, adhering to EU regulations. Key technical developments include the advancement of 18nm FD-SOI and next-generation embedded Phase Change Memory (ePCM). These innovations will lead to high-performance, secure microcontrollers with AI capabilities, offering low power consumption and high security for smart applications. The project will integrate advances in non-volatile memory technologies with cutting-edge MCU design to enable efficient in-memory computing. This synergy will deliver a fully European solution for reliable, safe, and independent edge AI applications. NeAIxt will address the entire edge AI value chain, from academia to industry, and from design to end-user applications, building on Europe's strong technological foundation. The project's outcomes will alleviate societal concerns about AI proliferation by ensuring compliance with European privacy standards, fostering AI adoption in various sectors.