
LAM RESEARCH SAS
LAM RESEARCH SAS
3 Projects, page 1 of 1
Open Access Mandate for Publications assignment_turned_in Project2018 - 2023Partners:SIEC BADAWCZA LUKASIEWICZ - INSTYTUT MIKROELEKTRONIKI I FOTONIKI, ELFOREST AB, STU, NANODESIGN, MIUN +26 partnersSIEC BADAWCZA LUKASIEWICZ - INSTYTUT MIKROELEKTRONIKI I FOTONIKI,ELFOREST AB,STU,NANODESIGN,MIUN,LAM RESEARCH SAS,CENTROTHERM INTERNATIONAL AG,APPLIED MATERIALS ITALIA SRL,HQ-Dielectrics (Germany),APPLIED MATERIALS GMBH,Disco (Germany),IUNET,UNIPA,STMICROELECTRONICS SILICON CARBIDE AB,STMicroelectronics (Switzerland),LAM,FORES,Ikerlan,AMIL,CNR,JSR MICRO NV,EVG,APPLIED MATERIALS IRELAND LIMITED,II-VI GMBH,University of Zaragoza,algoWatt,University of Bucharest,DACPOL SP. Z O.O.,LPE,EVATEC AG,IPDFunder: European Commission Project Code: 783158Overall Budget: 49,767,700 EURFunder Contribution: 10,402,000 EURREACTION will push through the first worldwide 200mm Silicon Carbide (SiC) Pilot Line Facility for Power technology. This will enable the European industry to set the world reference of innovative and competitive solutions for critical societal challenges, like Energy saving and CO2 Reduction as well as Sustainable Environment through electric mobility and industrial power efficiency. Establishing the first 200mm SiC Pilot Line in the world and developing the most innovative and cost competitive technology, this project will address mass-market applications like smart energy and smart mobility, and industrial. It will allow to meet the more and more increasing demand of requirements in terms of quality and cost constraint for next decade generation’s power electronics. The Project strength is the complete Pilot Line value chain implementation, integrating and optimizing partnership in the fields of SiC equipment developers, SiC process technologists, RTOs, and end users partners till the final applications context. This will allow to develop a full 8” SiC line ecosystem enhancing the competitiveness of EU- Industries down to the value chain in a market context where other countries today, such as the USA or Japan, are just starting to play on 6” SiC market. Innovative SiC power device Performances improvements, together with cost and size reductions, are the most relevant challenges addressed in the project that are expected to lead to a new stronger European supply chain for very compact SiC converters, from 600V to 2.2kV range, ideal for the addressed applications; the ambition is therefore to play a primary role towards excellence in Europe by a first generations of 8” SiC profitable Smart Mobility and Smart Energy products and components, primary access to IPs for the relevant essential capabilities, competitiveness of manufacturing in Europe.
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For further information contact us at helpdesk@openaire.euOpen Access Mandate for Publications assignment_turned_in Project2015 - 2017Partners:SONY, SYNOPSYS (NORTHERN EUROPE) LIMITED, LETI, NOVA LTD, Alcatel-Lucent (Germany) +29 partnersSONY,SYNOPSYS (NORTHERN EUROPE) LIMITED,LETI,NOVA LTD,Alcatel-Lucent (Germany),LAM RESEARCH AG,KLA,ST,ISD,EVG,PICOSUN OY,STM CROLLES,SILTRONIC AG,UCL,AXS,DAINIPPON SCREEN DEUTSCHLAND GMBH,UGR,APPLIED MATERIALS FRANCE,CNRS,Grenoble INP - UGA,HSEB DRESDEN GMBH,FEI,STGNB 2 SAS,TOKYO ELECTRON EUROPE LIMITED,PRODRIVE BV,HQ-Dielectrics (Germany),SOCIONEXT EUROPE GMBH,MunEDA,SOITEC,FHG,LAM RESEARCH SAS,GSS,GLOBAL TCAD SOLUTIONS GMBH,GLOBALFOUNDRIES Dresden Module One LLC & Co. KGFunder: European Commission Project Code: 662175Overall Budget: 99,399,296 EURFunder Contribution: 25,796,600 EURThe proposed pilot line project WAYTOGO FAST objective is to leverage Europe leadership in Fully Depleted Silicon on Insulator technology (FDSOI) so as to compete in leading edge technology at node 14nm and beyond preparing as well the following node transistor architecture. Europe is at the root of this breakthrough technology in More Moore law. The project aims at establishing a distributed pilot line between 2 companies: - Soitec for the fabrication of advanced engineered substrates (UTBB: Ultra Thin Body and BOx (buried oxide)) without and with strained silicon top film. - STMicroelectronics for the development and industrialization of state of the art FDSOI technology platform at 14nm and beyond with an industry competitive Power-Performance-Area-Cost (PPAC) trade-off. The project represents the first phase of a 2 phase program aiming at establishing a 10nm FDSOI technology for 2018-19. A strong added value network is created across this project to enhance a competitive European value chain on a European breakthrough and prepare next big wave of electronic devices. The consortium gathers a large group of partners: academics/institutes, equipment and substrate providers, semiconductor companies, a foundry, EDA providers, IP providers, fabless design houses, and a system manufacturer. E&M will contribute to the objective of installing a pilot line capable of manufacturing both advanced SOI substrates and FDSOI CMOS integrated circuits at 14nm and beyond. Design houses and electronics system manufacturer will provide demonstrator and enabling IP, to spread the FDSOI technology and establish it as a standard in term of leading edge energy efficient CMOS technology for a wide range of applications battery operated (consumer , healthcare, Internet of things) or not. Close collaboration between the design activities and the technology definition will tailor the PPAC trade-off of the next generation of technology to the applications needs.
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For further information contact us at helpdesk@openaire.euOpen Access Mandate for Publications assignment_turned_in Project2017 - 2023Partners:STMicroelectronics (Switzerland), University of Bucharest, EVG, ICOS, University of Seville +32 partnersSTMicroelectronics (Switzerland),University of Bucharest,EVG,ICOS,University of Seville,Wesob Spolka z Ograniczona Odpowiedzialnoscia,UniPi,greenpower,APPLIED MATERIALS FRANCE,SIEC BADAWCZA LUKASIEWICZ - INSTYTUT MIKROELEKTRONIKI I FOTONIKI,APC,NANODESIGN,BUT,LAM RESEARCH SAS,Robert Bosch (Germany),NOVA MEASURING INSTRUMENTS GMBH,STU,IUNET,AP&S,ASM EUROPE BV,KLA-Tencor MIE GmbH,BESI,PICOSUN OY,CNR,Disco (Germany),IMA,APPLIED MATERIALS IRELAND LIMITED,IPD,LASER SYSTEMS & SOLUTIONS OF EUROPE,ATOTECH,ANCOSYS GMBH,POLITO,SOITEC,SILTRONIC AG,AMIL,UNIPV,NOVA LTDFunder: European Commission Project Code: 737417Overall Budget: 180,318,000 EURFunder Contribution: 28,046,200 EURR3-POWERUP will push through the new generation of 300mm Pilot Line Facility for Smart Power technology in Europe. This will enable the European industry to set the world reference of innovative and competitive solutions for critical societal challenges, like Energy saving and CO2 Reduction (ref. to COP21 Agreement ), as well as Sustainable Environment through electric mobility and industrial power efficiency. ● Development and demonstration of a brand new 300mm advanced manufacturing facility addressing a multi-KET Pilot Line (i.e. Nanoelectronics, Nanotechnology, Advanced Manufacturing) ● Improvement in productivity and competitiveness of integrated IC solutions for smart power and power discrete technologies. The strategy of the project is the following: ● The Pilot Line will enable the realization of sub-100nm Smart Power processes, starting from the 90nm BCD10 process, taking profit from the advanced and peculiar equipments available only for 300mm wafer size. ● The availability of a 300mm full processing line will also exploit the portability to 300mm of the most critical and expensive process steps devoted to power discrete devices. ● The Pilot Line will build on Digital Factory and Industry 4.0 principles, enforcing a flexible, adaptive and reliable facility, in order to investigate also the synergy and economic feasibility of supporting both Smart Power and power discrete processes in the same manufacturing line. ● The application of such technologies will be a breakthrough enabler for Energy Efficiency and CO2 Reduction worldwide, in line with COP21’s global action plan. The Pilot Line is based on three main pillars: 1. Market driven continuous innovation on smart-power and power discrete; 2. Industrial policy focused on high quality and mass production’s cost optimization; 3. Set the ground for future wafer upgrade of “More than Moore” disruptive technologies (e.g. advanced MEMS manufacturing, now at 200mm)
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