
SILTRONIC AG
SILTRONIC AG
15 Projects, page 1 of 3
Open Access Mandate for Publications assignment_turned_in Project2020 - 2024Partners:FHG, Sony Europe B.V., TUD, SILTRONIC AG, FORD OTOMOTIV SANAYI ANONIM SIRKETI +36 partnersFHG,Sony Europe B.V.,TUD,SILTRONIC AG,FORD OTOMOTIV SANAYI ANONIM SIRKETI,Bundeswehr,MunEDA,Bundeswehr University Munich,VIC,GLOBALFOUNDRIES Dresden Module One LLC & Co. KG,MIKROELEKTRONIK LTD,TU Delft,CEA,Silicon Radar (Germany),University of Bucharest,Sequans Communications (France),Anteverta,BUYUTECH TEKNOLOJI SANAYI VE TICARET ANONIM SIRKETI,RFBEAM MICROWAVE GMBH,STGNB 2 SAS,Lund University,SOITEC,EAB,D&R,IMEC,TRAXENS,FLAVIA IT-Management GmbH,STM CROLLES,KTH,MU,BMVg,Institut Polytechnique de Bordeaux,NI,ARBE ROBOTICS LTD,TURKCELL,UCL,Gdańsk University of Technology,TÜBİTAK,SMART IS MAKINALARI SANAYI VE TICARET ANONIM SIRKETI,ASYGN,AEDFunder: European Commission Project Code: 876124Overall Budget: 95,317,296 EURFunder Contribution: 24,640,000 EURThe overarching goal of BEYOND5 is to build a completely European supply chain for Radio-Frequency Electronics enabling new RF domains for sensing, communication, 5G radio infrastructure and beyond. BEYOND5 is first and foremost a technology project gathering most significant European actors covering the entire value chain from materials, semiconductor technologies, designs and components up to the systems. BEYOND5 will drive industrial roadmaps in More than Moore (MtM) in adding connectivity features on existing CMOS Technology. The ambition is to accomplish sustainable Radio Frequency SOI platforms to cover the frequency range from 0.7GHz to more than 100GHz, and to demonstrate the technical advantage of SOI, which allows combining large scale integration, low power consumption, cost competitiveness and higher reliability; thus, resulting in high volume production of trusted components with low environmental impact in Europe. This objective will be achieved in a “Time to Market” approach using the 3 major work streams: 1. Technology enhancement in three European industrial pilot lines: • 300mm RF SOI substrates pilot line in Soitec, supported by the “Substrate Innovation Center” in CEA LETI to prepare future generations. • RF-SOI 65nm pilot line for 5G FEM in ST addressing both sub-6GHz and 28GHz domains. • 22FDX pilot line addressing Digital Signal Processing of radio module and RF reliability, in GF 2. European RF design ecosystem strengthening, based on a large fabless community using FD-SOI and RF-SOI platforms 3. Six Leading edge systems aggregating the value chain to demonstrate added-value of the technology at the user level: • NB IoT for Smart Asset Tracking, • Contactless USB for high-data rate communication, • V2X for autonomous connected trucks, • 5G Low Power Digital Beamforming Base Station for Indoor dense spaces, • Automotive MIMO Radar with embedded AI, • Car Interior Radar for passenger monitoring.
more_vert Open Access Mandate for Publications assignment_turned_in Project2019 - 2022Partners:TST, TUD, SILTRONIC AG, KEMPPI OY, University of Bremen +40 partnersTST,TUD,SILTRONIC AG,KEMPPI OY,University of Bremen,IWO,University of Paderborn,SGS Institut Fresenius GmbH,MI2-FACTORY GMBH,ALFEN BV,TU Delft,IFD,Powertec (Slovakia),EAAT,CTR,BRUSA,H and K,UPM,STU,University of Rostock,ENEDO FINLAND OY,X-FAB SEMICONDUCTOR,Infineon Technologies (Austria),Ilmenau University of Technology,Zittau/Görlitz University of Applied Sciences,MCL,INGETEAM,Chemnitz University of Technology,CSIC,EPFZ,FHG,University of Oviedo,AVL SOFTWARE AND FUNCTIONS GMBH,FAGOR AUTO,BRUSA HYPOWER AG,Infineon Technologies (Germany),INFINEON TECHNOLOGIES CEGLED TELJESITMENYFELVEZETOKET GYARTO KORLATOLT FELELOSSEGU TARSASAG,VIF,SAL,AALTO,APC,X-FAB Dresden,JIACO INSTRUMENTS BV,ABB OY,BTEFunder: European Commission Project Code: 826417Overall Budget: 74,253,800 EURFunder Contribution: 16,914,100 EURThe objectives in Power2Power aim to foster a holistic, digitized pilot line approach by accelerating the transition of ideas to innovations in the Power Electronic Components and Systems domain. In the course of this project, the international leadership of the European industry in this segment will be strengthened by means of a digitized pilot line approach along the supply chain located entirely in Europe; working together with multiple organizations, combining different disciplines and knowledge areas in the heterogeneous power-ECS environment. Only these comprehensive efforts will allow reaching a high-volume production of smart power electronics to change the market towards energy-efficient applications to meet the carbon dioxide reduction goals of the European Union. Consequently, economic growth and Tackling grand societal challenges “Energy” and “Mobility” lead to safeguarding meaningful jobs for European citizens. Silicon-based power solutions will outperform new materials (SiC, GaN) for many more years in terms of cost-to-performance-ratio and reliability. Thus, the Silicon-based power solutions will keep innovating and growing the upcoming years. On a long run the project Power2Power will significantly impact the path to the industrial ambition of value creation by digitizing manufacturing and development in Europe. It fully supports this vision by addressing key topics of both pillars “Key Applications” and “Essential Capabilities”. By positioning Power2Power as innovation action, a clear focus on exploitation of the expected result is a primary goal. Smart energy utilization with highly efficient power semiconductor-based electronics is key in carefully utilizing the scarce resources. Energy generation, energy conversion and smart actors are these application domains where advanced high voltage power semiconductor components primarily impact the path toward winning innovations.
more_vert Open Access Mandate for Publications assignment_turned_in Project2015 - 2017Partners:NOVA LTD, UGR, CEA, Grenoble INP - UGA, SOCIONEXT EUROPE GMBH +30 partnersNOVA LTD,UGR,CEA,Grenoble INP - UGA,SOCIONEXT EUROPE GMBH,TOKYO ELECTRON EUROPE LIMITED,STGNB 2 SAS,LAM RESEARCH AG,SILTRONIC AG,HQ-Dielectrics (Germany),UCL,LAM RESEARCH SAS,MunEDA,PICOSUN OY,GLOBAL TCAD SOLUTIONS GMBH,CNRS,STMicroelectronics (Switzerland),ST,ISD,EVG,SOITEC,GSS,PRODRIVE BV,APPLIED MATERIALS FRANCE,FHG,SYNOPSYS (NORTHERN EUROPE) LIMITED,FEI,AXS,KLA,DAINIPPON SCREEN DEUTSCHLAND GMBH,GLOBALFOUNDRIES Dresden Module One LLC & Co. KG,SONY,Alcatel-Lucent (Germany),HSEB DRESDEN GMBH,STM CROLLESFunder: European Commission Project Code: 662175Overall Budget: 99,399,296 EURFunder Contribution: 25,796,600 EURThe proposed pilot line project WAYTOGO FAST objective is to leverage Europe leadership in Fully Depleted Silicon on Insulator technology (FDSOI) so as to compete in leading edge technology at node 14nm and beyond preparing as well the following node transistor architecture. Europe is at the root of this breakthrough technology in More Moore law. The project aims at establishing a distributed pilot line between 2 companies: - Soitec for the fabrication of advanced engineered substrates (UTBB: Ultra Thin Body and BOx (buried oxide)) without and with strained silicon top film. - STMicroelectronics for the development and industrialization of state of the art FDSOI technology platform at 14nm and beyond with an industry competitive Power-Performance-Area-Cost (PPAC) trade-off. The project represents the first phase of a 2 phase program aiming at establishing a 10nm FDSOI technology for 2018-19. A strong added value network is created across this project to enhance a competitive European value chain on a European breakthrough and prepare next big wave of electronic devices. The consortium gathers a large group of partners: academics/institutes, equipment and substrate providers, semiconductor companies, a foundry, EDA providers, IP providers, fabless design houses, and a system manufacturer. E&M will contribute to the objective of installing a pilot line capable of manufacturing both advanced SOI substrates and FDSOI CMOS integrated circuits at 14nm and beyond. Design houses and electronics system manufacturer will provide demonstrator and enabling IP, to spread the FDSOI technology and establish it as a standard in term of leading edge energy efficient CMOS technology for a wide range of applications battery operated (consumer , healthcare, Internet of things) or not. Close collaboration between the design activities and the technology definition will tailor the PPAC trade-off of the next generation of technology to the applications needs.
more_vert Open Access Mandate for Publications assignment_turned_in Project2015 - 2018Partners:UiO, University of Graz, TUD, SILTRONIC AG, DELTA ELECTRONICS (NORWAY) +34 partnersUiO,University of Graz,TUD,SILTRONIC AG,DELTA ELECTRONICS (NORWAY),IFD,FORES,Ikerlan,QUANTEMOL LIMITED,MPIE,CISC Semiconductor (Austria),CTR,PLANSEE SE,BESI,University of Bristol,NANODESIGN,INFINEON TECHNOLOGIES ITALIA Srl,MEMSSTAR LTD,TRYMAX SEMICONDUCTOR EQUIPMENT BV,UNIPD,NaMLab gGmbH,CSIC,FHG,PAC TECH,Besi Netherlands BV,Infineon Technologies (Austria),FRONIUS INTERNATIONAL GMBH,IMEC,SPTS Technologies (United Kingdom),KAI,STU,BAUMANN GMBH,Fabmatics (Germany),Infineon Technologies (Germany),FCM,greenpower,Ams AG,SOITEC BELGIUM NV,NFAGFunder: European Commission Project Code: 662133Overall Budget: 90,254,496 EURFunder Contribution: 19,196,500 EURThe key objective of PowerBase “Enhanced substrates and GaN pilot lines enabling compact power applications” is to ensure the availability of Electronic Components and Systems (ECS) for key markets and for addressing societal challenges, aiming at keeping Europe at the forefront of the technology development, bridging the gap between research and exploitation, creating economic and employment growth in the European Union. The project PowerBase aims to contribute to the industrial ambition of value creation in Europe and fully supports this vision by addressing key topics of ECSEL multi annual strategic plan 2014. By positioning PowerBase as innovation action a clear focus on exploitation of the expected result is primary goal. To expand the limits in current power semiconductor technologies the project focuses on setting up a qualified wide band gap GaN technology Pilot line, on expanding the limits of today’s silicon based substrate materials for power semiconductors, improving manufacturing efficiency by innovative automation, setting up of a GaN compatible chip embedding pilot line and demonstrating innovation potential in leading compact power application domains. PowerBase is a project proposal with a vertical supply chain involved with contributions from partners in 7 European countries. This spans expertise from raw material research, process innovation, pilot line, assembly innovation and pilot line up to various application domains representing enhanced smart systems. The supporting partners consist of market leaders in their domain, having excellent technological background, which are fully committed to achieve the very challenging project goals. The project PowerBase aims to have significant impact on mart regions. High tech jobs in the area of semiconductor technologies and micro/nano electronics in general are expressed core competences of the regions Austria: Carinthia, Styria, Germany: Sachsen, Bavaria and many other countries/ regions involved.
more_vert assignment_turned_in Project2010 - 2013Partners:MEMC, Intel (United States), SUSS MicroTec Lithography GmbH, SUSS MicroTec Photomask Equipment, LAM RESEARCH AG +36 partnersMEMC,Intel (United States),SUSS MicroTec Lithography GmbH,SUSS MicroTec Photomask Equipment,LAM RESEARCH AG,Landshut Silicon Foundry,Protec Carrier Systems GmbH,SILTRONIC AG,JO AT,HQ-Dielectrics (Germany),RF SUNY ,ICN2,Oxford Instruments (Germany),CEA,STM CROLLES,Metryx,SOITEC,PVA-AS,MIY,SUSS MICROOPTICS,AMIL,IMEC,adixen,SunEdison (United States),RMT,ICT Integrated Circuit Testing GmbH,TPI,FHG,Ibs (France),KLA,GLOBALFOUNDRIES Dresden Module One LLC & Co. KG,SUSS MicroTec (Germany),Ams AG,NANDA TECHNOLOGIES GMBH,SEMILAB ZRT,ACP,FRT GmbH,FHWN,Oxford Instruments (United Kingdom),Mapper Lithography (Netherlands),Infineon Technologies (Germany)Funder: European Commission Project Code: 257379more_vert
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