R2POWER300 is committed to challenge the following Objectives: • Development and manufacturing of a multi-KET Pilot Line (i.e. Nanoelectronics, Nanotechnology, Advanced Manufacturing) • Energy Efficiency and CO2 Reduction megatrends. The project aims to achieve the following Goals: 1. Set the stage for the future extension to 300mm of the R2 Fab facility located in Agrate Brianza (Italy) - i.e. line’s specification, tools’ evaluation and screening, new process’s optimization and characterization, etc. 2. To evaluate, characterize and optimize the equipments and process necessary to achieve the new BCD10 technology, featuring 90nm lithography, at 300mm wafer size. BCD (i.e. Bipolar + CMOS + DMOS) is a unique smart power technology invented by ST in the mid ‘80s (CMOS’s gate length was 4 m at that time!). As of today BCD is one of the key technology assets of ST and the indefatigable evolution and challenging roadmap makes ST a world-class leader on smart power ICs. 3. Advanced System in Packages: some SiP activity will be performed, with specific reference to Sintering based die-attach, thermal analysis and dedicated packaging solution for high density ALD capacitors.

The main objective of UltimateGaN is to safeguard Europe’s leading position in terms of power semiconductors and high performance RF applications by driving an innovative breakthrough change with the next generation of GaN-technologies. Several predecessor projects are the basis for the availability of the first generation of European based GaN-devices, also revealing that the challenges of these technologies have been heavily underestimated. This makes the high potential of GaN clearly evident to overcome the persisting threats of higher electric fields, current densities and power densities related to the necessity of device shrinkage. The new concept of following a vertical approach to address research through the entire supply chain of technology, packaging, reliability and application will enable a significant improvement of efficiency that goes beyond the limits of silicon based semiconductors in combination with packages that fully utilize the shrink-path of power GaN devices and which are not ready as of today. UltimateGaN’s unique approach addresses, among others, the following innovative applications with the scope to enable digitalisation and energy efficiency for 5G, Smart Grids and Smart Mobility that goes hand in hand with a significant reduction of the CO2 footprint: •Extremely efficient server power supply enabling lower energy consumption in data centres •Benchmark Photovoltaic inverters in terms of efficiency and size to foster the use of renewable energies •Affordable 5G-Amplifiers up to mm-wave enabling a faster 5G rollout •GaN powered LIDAR application to enable autonomous driving •Highest efficiency µ-Grid-converters and On-Board Chargers The global state-of-the-art first generation GaN devices are mainly based on US and Asian suppliers. Only a cooperative project like UltimateGaN with European market leaders and world-class researchers can take on the challenges and bring Europe at the forefront in terms of GaN enabled opportunities.

REACTION will push through the first worldwide 200mm Silicon Carbide (SiC) Pilot Line Facility for Power technology. This will enable the European industry to set the world reference of innovative and competitive solutions for critical societal challenges, like Energy saving and CO2 Reduction as well as Sustainable Environment through electric mobility and industrial power efficiency. Establishing the first 200mm SiC Pilot Line in the world and developing the most innovative and cost competitive technology, this project will address mass-market applications like smart energy and smart mobility, and industrial. It will allow to meet the more and more increasing demand of requirements in terms of quality and cost constraint for next decade generation’s power electronics. The Project strength is the complete Pilot Line value chain implementation, integrating and optimizing partnership in the fields of SiC equipment developers, SiC process technologists, RTOs, and end users partners till the final applications context. This will allow to develop a full 8” SiC line ecosystem enhancing the competitiveness of EU- Industries down to the value chain in a market context where other countries today, such as the USA or Japan, are just starting to play on 6” SiC market. Innovative SiC power device Performances improvements, together with cost and size reductions, are the most relevant challenges addressed in the project that are expected to lead to a new stronger European supply chain for very compact SiC converters, from 600V to 2.2kV range, ideal for the addressed applications; the ambition is therefore to play a primary role towards excellence in Europe by a first generations of 8” SiC profitable Smart Mobility and Smart Energy products and components, primary access to IPs for the relevant essential capabilities, competitiveness of manufacturing in Europe.

The project objective of the project HiPERFORM is based on the investigation of industrial applicability of high-performance semiconductors with wide-band gap materials in the field of Smart Mobility. For this purpose, a holistic approach is selected that includes the entire supply chain - from the manufacturer of semiconductors as well as power modules through suppliers of development methods and tools to the system manufacturer and ultimately the vehicle manufacturer. The integration of academic partners with a high level of competence in these domains completes this approach. On the other hand, specific requirements for power electronics are addressed in specific application areas, which include both power inverters in the vehicle, electrical charging modules inside and outside the vehicle, as well as the associated development and test systems. The high performance spectrum of wide-band gap semiconductors and the resulting potential for improvement and savings within the concrete applications of the electrified power train contribute to a substantial saving of CO2 in transport and thus support the achievement of the set climate targets in Europe. The jointly planned objectives and research activities will further strengthen European research and industry partners in the field of electronic components and systems. Besides Semiconductor manufacturing capabilities, the project requires also high capabilities in Cyber Physical Systems and Design Technologies and supports the domain Smart Mobility and Smart Energy as well.