Powered by OpenAIRE graph
Found an issue? Give us feedback

DEEP CONCEPT

Country: France
Funder
Top 100 values are shown in the filters
Results number
arrow_drop_down
6 Projects, page 1 of 2
  • Funder: European Commission Project Code: 831877
    Overall Budget: 880,979 EURFunder Contribution: 880,979 EUR

    This project is about developing and demonstrating a lightweight high-voltage solid-state protection component (SSPC) compatible with aerospace standards. Specifically, a product suitable for electrical architectures with voltage bus higher than 1 kV and current capability higher than 1 kA will be pursued. The proposed solution will incorporate the cooling and thermal management device, as well as the necessary electro-magnetic shielding features required to meet the standards of aerospace applications. To achieve the intended targets, the project will base on a balanced mixture of topological and technological studies and will deliver built-in reliability integrated solutions at the TRL4 level.

    more_vert
  • Funder: European Commission Project Code: 101075672
    Overall Budget: 5,533,910 EURFunder Contribution: 4,393,520 EUR

    Driven by the continued effort to combat the climate change and achieve carbon neutrality, the composition of the energy sources and consumers connected to the electrical grid is rapidly changing. An increasing amount of issues are being experienced by distribution system operators while trying to accommodate new systems like renewable energy sources or electric vehicles charging infrastructure. One of the possible solutions is to develop a DC distribution infrastructure, which is especially interesting as most of the new connections mentioned above are native DC sources and loads, respectively. This requires low cost, very efficient and compact DC/DC converters from LV (10kV). However, currently no commercial solutions exist on the market. The aim of this project is to develop and demonstrate a commercial DC/DC converter prototype which can be introduced to the market within short timescale (<3 years) after completion of the project. To achieve such an ambitious target, the project team has decided to focus on the development of ultra- high voltage (UHV) SiC based switching devices which would allow for a remarkable simplification of the converter topology as well as a very compact design when coupled with high frequency operation. For this purpose, the project aims at the design, fabrication and testing of 15 kV SiC IGBTs modules. The choice of the device technology is based on previous studies, which point towards a break-even voltage between SiC MOSFET and SiC IGBT just above 10 kV. Highly relevant, both cost and environmental impact reduction of the fabrication processes will be targeted, using novel approaches for material growth and semiconductor processing. At the same time, another major target of the project is to understand reliability issues affecting different converter components such as UHV switching devices, passive components, and medium frequency transformer associated with high switching frequency and high voltage environment.

    more_vert
  • Funder: French National Research Agency (ANR) Project Code: ANR-23-ASM2-0010
    Funder Contribution: 507,650 EUR

    The civilian market for SiC power devices has been driven by an exponential growth since the 2010s, thanks to the needs of automotive and solar industry. The industrial offer is now mature for 1200 V and 1700 V SiC components, either diodes, MOSFETs. However, the higher the breakdown voltage goes, the sparser the market offer gets. This results from lesser market size, and technological difficulties that remain to be solved. However, SiC semiconductor is probably even more attractive for higher voltages range (3.3kV-10kV) when compared to Si solutions. It is worth noticing that at higher breakdown voltage class bipolar transistors such as GTOs are expected to be available earlier than MOSFETs because of their higher current and voltage capabilities, and the more complex reliability issues for the latter transistor. So bipolar devices will be relevant for the civilian market, even if they are deemed less convenient application-wise. One of the most straightforward application of high voltage SiC thyristor is pulsed power electronics. In this sense, Institut Saint Louis (ISL) and Ampère laboratory have been studying extensively the potential of the SiC technology to design and build efficient thyristors able to cope with high voltage and high peak current capabilities. These studies allowed creating a large quantity of knowledge and knowhow almost unique in the field, at least in Europe. The CARTHAGE project presents an opportunity to transform the previously developed concepts by ISL+Ampère in a semi-industrial product using stable, repetitive and in-line controlled processing. Based on these observations, the Carthage partners jointly believe that it is now feasible to develop, prototypes and test advanced SiC thyristors, and once packaged demonstrate their performances and potential for civilian and military applications (reaching then TRL 5). The CARTHAGE project aim to provide such a demonstration. Also, the number of wafers to be processed has been chosen to provide first estimates of yield as well as, hopefully, a final number of functional devices commensurate with future demonstrations of system applications, especially for military use cases. In this sense, the project integrates different objectives and related activities which will cover the product’s value chain. The first objective is to transfer the SiC thyristor fabrication technology in a semi-industrial processing platform, with the objective to mature and stabilize the fabrication process and allow the production of reasonable number of reliable chips (>200) per batches. For this purpose, it is important to study and improve the integration of large area devices while limiting the stacking faults degradation. Another target is to adapt and optimize the design of the thyristor architecture, including the high voltage edge termination, to the novel technology platform. A task to optimize an assembly and packaging technology adapted to high-pulsed current density and high power density operation is also required and a main target of the project. The last objective will be to demonstrate the full value chain from material to characterization in an application subsystem. To reach these goals, a consortium including a combination of complementary academic and industrial partners (CEA-Leti, ISL, Ampère, IBS, DEEP Concept) has been built in order to cover the value chain from starting semiconductor material to the component characterization in a subsystem. The complementarity of the partner will not only allow to reach the technical objectives but also to bring new insights in the physics and general understanding of SiC processing technology. In addition, the partners have a long collaboration background on SiC and power devices in general, which will allow a good understanding and efficiency in the scientific and technical interactions.

    more_vert
  • Funder: European Commission Project Code: 821500
    Overall Budget: 1,502,330 EURFunder Contribution: 1,298,980 EUR

    This project is about designing and demonstrating a high voltage bi-directional rectifier system rated at 300 kW, with a switching frequency of at least 10 kHz and a DC-bus higher than 2 kV. One main undertaking of the project is to deliver a lightweight efficient system. To achieve this, a mix of technological and topological studies will be carried out, including deployment of novel silicon-carbide (SiC) semiconductor technology at 1.2 and 3.3 kV with advanced multi-level power converter architectures. The project will deliver an innovative solutions, disruptive in the avionic sector and with important spin-off learning to a number of pivotal societal application domains of strategic relevance.

    more_vert
  • Funder: European Commission Project Code: 101075709
    Overall Budget: 4,001,420 EURFunder Contribution: 3,242,370 EUR

    For a larger deployment of clean and sustainable energies more efficient and competitive converter solutions are necessary. In this framework, wide Bandgap (WBG) technology provides benefits compared to conventional silicon technology. Even those benefits are well known, e.g. efficiency and/or sufficient reduction on converter footprint, right now SiC are far too expensive and its cost has a negative impact on overall system cost. In the view of this situation, the objective of AdvanSiC is to produce, test and validate cost-effective HV SiC MOSFET semiconductors in various MVDC grid applications: a solid-state circuit breaker for DC converter stations, a full-scale wind converter and a full-scale solar inverter. The aim is to minimize HV SiC device cost by advanced design structures and process optimizations. And afterwards, assure an immune and reliable environment to handle SiC fast transients, as well as optimize passives and cooling system to provide cost reduction not only at device level but also at system level. The main goal of AdvanSiC is to provide industrial leadership in key and emerging technologies to SMEs, start-ups, and industry from Europe to Europe, specifically in a technology that will be key to provide clean and affordable energy.

    more_vert
  • chevron_left
  • 1
  • 2
  • chevron_right

Do the share buttons not appear? Please make sure, any blocking addon is disabled, and then reload the page.

Content report
No reports available
Funder report
No option selected
arrow_drop_down

Do you wish to download a CSV file? Note that this process may take a while.

There was an error in csv downloading. Please try again later.