GaN4AP project has the ambitious target of making the GaN-based electronics to become the main power active device present in all power converter systems, with the possibility of developing a close-to-zero energy loss power electronic systems. GaN4AP project will… 1. Develop innovative Power Electronic Systems for power conversion and management with advanced architecture and circuit topology based on state of the art GaN-based High Electron Mobility Transistors (HEMTs) available in a new concept high-frequency packages that can achieve the requested 99% power conversion efficiency. 2. Develop an innovative material (Aluminium Scandium Nitride, AlScN) that combined with advanced growth and process solutions can provide outstanding physical properties for highly efficient power transistors. Therefore, a new HEMT device architecture will be fabricated with much higher current (2x) and power density (2x) than existing transistors. 3. Develop a new generation of vertical power GaN-based devices on MOSFET architecture with vertical p-GaN inversion channel for safe power switching up to 1200 V. We will cover all the production chain from the device design, processing and characterization up to tests in low inductance half bridge power modules and their implementation in high speed power switching systems. 4. Develop a new intelligent and integrated GaN solutions (STi2GaN) both in System in Package (SiP) and Monolithic variances, that will allow the generation of E-Mobility power converters. The projects will focus on scalable concept for 48V-12V bidirectional Buck Boost converters for conventional and ADAS applications combining, in a novel wire-bond free package, a state of the art BCD driver & controller along with a common substrate Monolithic 100V e-GaN Half Bridge. The development of new device technologies and innovative power circuits, employing the GaN-based devices is a crucial factor for the world-wide competitiveness of EU industries.

Li-ion batteries are fundamental components for the energy transition of the European eco-system. Currently Europe lags behind Asia in terms of Li-ion battery cell manufacturing and more than 90% of the world's production takes place in China, Korea and Japan. To overcome this situation, there is an ambitious ramp-up plan of 25 new gigafactories in Europe with an expected value of €35 billion by 2030. However, in the ramp-up phase of these Gigafactories, a massive production of defects is expected, between 15% - 30%. The new European Gigafactories will also bring demand for €150 bn of battery manufacturing equipment. To support this demand, the EU production equipment industry needs to fill the current knowledge gap and gain competitiveness towards Asian providers, grounding on its world-wide leadership in high-tech, green technologies, enhanced by industry 4.0 digital solutions, exploiting the European Zero-Defect Manufacturing paradigm. The objective of BATTwin is to support this scenario by developing a novel Multi-level Digital Twin platform towards Zero-Defect Manufacturing in battery production, that will reduce defect rates in battery production lines. The solution integrates four pillars, namely (i) a multi-sensor data acquisition and management layer, supported by data semantics through a Digital Battery Passport data model, (ii) process-level digital twins, modeling the critical stages of electrode manufacturing, cell assembly and conditioning through multi-physics, data-driven and hybrid approaches, (iii) system-level digital twins, based on simulation and analytical modeling, (iv) user-centric, goal-driven digital twin workflows, increasing the explainability of digital twins and driving the user in system design and control. The approach will be tested in two industrial pilots producing different battery chemistries and geometries, validating the flexibility and scaleability of the approach towards Zero Defect European Gigafactories.