Now that renewable energy generation is already competitive in cost with electricity obtained from fossil fuels, the development of efficient long term energy storage methods seems crucial for a faster transition to a net-zero greenhouse gas emissions EU economy. Power-to-X methods are promising due to their negligible discharge rate but up to now all the efforts have been based on the use of H2 obtained by electrolysis, and the TEAs have shown that the high cost of the electrolysers hinders greatly its possibilities of industrial use. EffiTorch aims at developing an alternative breakthrough technology for Power-to-X based on the direct splitting of CO2, using an ultra-high temperature thermal plasma, with the simultaneous valorisation of low value bio-waste, leading to the efficient production of syngas. EffiTorch aims to reach carbon efficiencies higher than 90% and energy efficiencies higher than 60%, outperforming the best solutions available presently. Some of the research groups in Effitorch have a vast experience in CO2 splitting using Microwave (MW) plasma torches. Nevertheless, recently a compound approach that combines CO2 splitting by thermal plasmas with a quenching using the very endothermic reverse Bouduard reaction (RBR) has been developed in China that vastly improves the promising results obtained in the splitting of CO2 , while solving one of the yet unresolved issues, that of the efficient separation of the gases obtained. EffiTorch aims to explore the possibilities offered by a much improved version of the experimental set-ups used by the Chinese groups, including additional sophistications like the ultrasonic atomization of a bio-oil obtained by Hydrothermal Liquefaction (HTL) from sewage sludge, the use of high temperature reactors with plasma confinement and the implementation of a secondary heating of the plasma by induction with HF frequency (100-400 KHz), that could improve the energy efficiency and reduce costs.

YESvGaN targets a new low-cost wide band gap (WBG) power transistor technology for enabling high-efficiency power electronic systems in the field of electromobility, industrial drives, renewable energies and data centers. In many applications requiring power transistors with high voltage and current rating (600…1200V, ~100A), silicon IGBT technology is nowadays used due to cost considerations accepting its lower efficiency compared to WBG solutions. The main objective of YESvGaN is to demonstrate innovative vertical gallium nitride (GaN) power transistors fabricated on a low-cost substrate such as silicon. This so-called vertical membrane architecture combines the superior performance of GaN as WBG power transistor material with the advantages of a vertical architecture regarding current and voltage robustness at a price competitive to silicon IGBTs. To this end, the entire value chain from substrate, epitaxy, process technology, interconnection technology to application in relevant power electronic systems is addressed. YESvGaN clusters the relevant competences along the value chain in a consortium of large companies, SMEs and institutes from seven European countries.